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1. (WO2018034770) DENSITY-OPTIMIZED MODULE-LEVEL INDUCTOR GROUND STRUCTURE
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.:    WO/2018/034770    International Application No.:    PCT/US2017/042555
Publication Date: 22.02.2018 International Filing Date: 18.07.2017
Chapter 2 Demand Filed:    05.06.2018    
IPC:
H05K 1/02 (2006.01), H01L 49/02 (2006.01), H01L 23/522 (2006.01), H01L 23/552 (2006.01), H01L 23/64 (2006.01), H01L 23/00 (2006.01), H05K 3/06 (2006.01), H05K 1/14 (2006.01)
Applicants: QUALCOMM INCORPORATED [US/US]; ATTN: International IP Administration 5775 Morehouse Drive San Diego, California 92121-1714 (US)
Inventors: BERDY, David Francis; (US).
YUN, Changhan Hobie; (US).
MUDAKATTE, Niranjan Sunil; (US).
VELEZ, Mario Francisco; (US).
ZUO, Chengjie; (US).
KIM, Jonghae; (US)
Agent: LENKIN, Alan M.; (US).
LUTZ, Joseph; (US).
PARTOW-NAVID, Puya; (US).
FASHU-KANU, Alvin V.; (US)
Priority Data:
15/239,751 17.08.2016 US
Title (EN) DENSITY-OPTIMIZED MODULE-LEVEL INDUCTOR GROUND STRUCTURE
(FR) STRUCTURE DE MISE À LA MASSE D'INDUCTEUR AU NIVEAU DU MODULE OPTIMISÉE EN DENSITÉ
Abstract: front page image
(EN)An integrated circuit (IC) device (300) may include a first substrate (310) having an inductor ground plane (320) in a conductive layer of the first substrate. The integrated circuit may also include a first inductor (340) in a passive device layer (332) of a second substrate (330) that is supported by the first substrate. A shape of the inductor ground plane may substantially correspond to a silhouette of the first inductor.
(FR)Selon l'invention, un dispositif de circuit intégré (CI) peut comprendre un premier substrat (310) doté d'un plan de masse d'inducteur (320) dans une couche conductrice du premier substrat. Le CI peut également comprendre un premier inducteur (340) dans une couche de dispositif passif (332) d'un second substrat (330) qui est soutenu par le premier substrat. Une forme du plan de masse d'inducteur peut sensiblement correspondre à une silhouette du premier inducteur.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)