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1. (WO2018034532) SIC MATERIAL AND SIC COMPOSITE MATERIAL

Pub. No.:    WO/2018/034532    International Application No.:    PCT/KR2017/009002
Publication Date: Fri Feb 23 00:59:59 CET 2018 International Filing Date: Sat Aug 19 01:59:59 CEST 2017
IPC: C01B 32/956
Applicants: TOKAI CARBON KOREA CO., LTD
주식회사 티씨케이
Inventors: KIM, Joung Il
김정일
Title: SIC MATERIAL AND SIC COMPOSITE MATERIAL
Abstract:
The present invention relates to an SiC material and an SiC composite material and, more particularly, to an SiC material and an SiC composite material having a diffraction intensity ratio (I) of an X-ray diffraction peak, calculated by formula 1 down below, of less than 1.5. The present invention can provide an SiC material and an SiC composite material which can be etched evenly when exposed to plasma and thereby reduce the occurrence of cracks, holes and so forth. [Formula 1] Diffraction intensity ratio (I) = (peak intensity of plane (200) + peak intensity of plane (220)) / peak intensity of plane (111)