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1. (WO2018034532) SIC MATERIAL AND SIC COMPOSITE MATERIAL
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.:    WO/2018/034532    International Application No.:    PCT/KR2017/009002
Publication Date: 22.02.2018 International Filing Date: 18.08.2017
IPC:
C01B 32/956 (2017.01)
Applicants: TOKAI CARBON KOREA CO., LTD [KR/KR]; 71, Gaejeongsaneopdanji-ro, Miyang-myeon Anseong-si Gyeonggi-do 17602 (KR)
Inventors: KIM, Joung Il; (KR)
Agent: MUHANN PATENT & LAW FIRM; (Myeonglim Building, Nonhyeon-dong) 5th Floor, 9 Hakdong-ro 3-gil Gangnam-gu Seoul 06044 (KR)
Priority Data:
10-2016-0104726 18.08.2016 KR
Title (EN) SIC MATERIAL AND SIC COMPOSITE MATERIAL
(FR) MATÉRIAU SIC ET MATÉRIAU COMPOSITE SIC
(KO) SIC 소재 및 SIC 복합 소재
Abstract: front page image
(EN)The present invention relates to an SiC material and an SiC composite material and, more particularly, to an SiC material and an SiC composite material having a diffraction intensity ratio (I) of an X-ray diffraction peak, calculated by formula 1 down below, of less than 1.5. The present invention can provide an SiC material and an SiC composite material which can be etched evenly when exposed to plasma and thereby reduce the occurrence of cracks, holes and so forth. [Formula 1] Diffraction intensity ratio (I) = (peak intensity of plane (200) + peak intensity of plane (220)) / peak intensity of plane (111)
(FR)La présente invention concerne un matériau SiC et un matériau composite SiC et, plus particulièrement, un matériau SiC et un matériau composite SiC ayant un rapport d'intensité de diffraction (I) d'un pic de diffraction des rayons X, calculé par la formule 1 ci-dessous, inférieure à 1,5. La présente invention peut fournir un matériau SiC et un matériau composite SiC qui peut être gravé uniformément lorsqu'il est exposé au plasma et réduire ainsi l'apparition de fissures, de trous et ainsi de suite. [Formule 1] Rapport d'intensité de Diffraction (I) = (intensité de pic du plan (200) + intensité de pic du plan (220))/intensité de pic du plan (111)
(KO)본 발명은, SiC 소재 및 SiC 복합 소재에 관한 것으로, 보다 구체적으로, 하기의 식 1에 따라 계산되는 X-회절 피크의 회절 강도비(I)가 1.5 미만인 SiC 소재 및 SiC 복합 소재에 관한 것이다. 본 발명은, 플라즈마에 노출 시 균일하게 식각되어 크랙, 홀 등의 발생을 낮출 수 있는 SiC 소재 및 SiC 복합 소재를 제공할 수 있다. [식 1] 회절 강도비(I)=((200)면 피크 강도 + (220)면의 피크 강도)/(111)면의 피크 강도
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: Korean (KO)
Filing Language: Korean (KO)