Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2018034322) METAL-OXIDE–SEMICONDUCTOR (MOS) OPTICAL MODULATOR AND METHOD OF MANUFACTURING SAME
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2018/034322 International Application No.: PCT/JP2017/029548
Publication Date: 22.02.2018 International Filing Date: 17.08.2017
IPC:
G02F 1/025 (2006.01) ,G02F 1/01 (2006.01)
G PHYSICS
02
OPTICS
F
DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1
Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01
for the control of the intensity, phase, polarisation or colour
015
based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
025
in an optical waveguide structure
G PHYSICS
02
OPTICS
F
DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1
Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01
for the control of the intensity, phase, polarisation or colour
Applicants:
国立大学法人東京大学 THE UNIVERSITY OF TOKYO [JP/JP]; 東京都文京区本郷七丁目3番1号 3-1, Hongo 7-chome, Bunkyo-ku, Tokyo 1138654, JP
Inventors:
竹中 充 TAKENAKA Mitsuru; JP
韓 在勲 HAN Jae-Hoon; JP
高木 信一 TAKAGI Shinichi; JP
Agent:
吉田 正義 YOSHIDA Tadanori; JP
Priority Data:
2016-16022917.08.2016JP
Title (EN) METAL-OXIDE–SEMICONDUCTOR (MOS) OPTICAL MODULATOR AND METHOD OF MANUFACTURING SAME
(FR) MODULATEUR OPTIQUE MÉTAL-OXIDE-SEMICONDUCTEURS (MOS) ET SON PROCÉDÉ DE FABRICATION
(JA) MOS型光変調器及びその製造方法
Abstract:
(EN) Provided are: a metal-oxide-semiconductor (MOS) optical modulator which has high modulation efficiency; and a method of manufacturing the same. In this MOS optical modulator (22), a SiO2 layer (31), a Si layer (32), a gate insulation film (33), and a gate layer (34), etc., are laminated on a silicon substrate (11). A rib (32a) is provided and a rib-type optical waveguide (21) is formed on the surface of the Si layer (32). The Si layer (32) is an n-type doped semiconductor including the rib (32a). The gate layer (34) is obtained by laminating a first layer (34a) formed from InGaAsP and a second layer (34b) formed from InP. The first layer (34a) and the second layer (34b) are n-type doped semiconductors. The MOS optical modulator (22) has a refractive index which varies with a density change of electrons accumulated on an interface between the gate insulation film (33) and the gate layer (34).
(FR) L'invention concerne : un modulateur optique métal-oxyde-semiconducteur (MOS) qui a une efficacité de modulation élevée; et un procédé de fabrication de celui-ci. Dans ce modulateur optique MOS (22), une couche de SiO 2 (31), une couche de Si (32), un film d'isolation de grille (33), et une couche de grille (34), etc, sont stratifiés sur un substrat de silicium (11). Une nervure (32a) est prévue et un guide d'ondes optique de type nervure (21) est formé sur la surface de la couche de Si (32). La couche de Si (32) est un semi-conducteur dopé de type n comprenant la nervure (32a). La couche de grille (34) est obtenue par stratification d'une première couche (34a) formée à partir d'InGaAsP et d'une seconde couche (34b) formée à partir de InP. La première couche (34a) et la seconde couche (34b) sont des semi-conducteurs dopés de type n. Le modulateur optique MOS (22) a un indice de réfraction qui varie avec un changement de densité d'électrons accumulés sur une interface entre le film d'isolation de grille (33) et la couche de grille (34).
(JA) 変調効率が高いMOS型光変調器及びその製造方法を提供する。MOS型光変調器(22)は、シリコン基板(11)上に、SiO層(31)、Si層(32)、ゲート絶縁膜(33)、ゲート層(34)等が積層されている。Si層(32)の表面にリブ(32a)が設けられリブ型の光導波路(21)が構成される。Si層(32)は、リブ(32a)を含めnドープされたn型半導体である。ゲート層(34)は、InGaAsPからなる第1層(34a)と、InPからなる第2層(34b)とを積層したものである。第1層(34a)と第2層(34b)とは、nドープされたn型半導体である。MOS型光変調器(22)は、ゲート絶縁膜(33)とゲート層(34)の界面に蓄積される電子密度の変化で屈折率が変化する。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)