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1. (WO2018034266) PHOTOELECTRIC CONVERSION ELEMENT AND PHOTOELECTRIC CONVERSION DEVICE

Pub. No.:    WO/2018/034266    International Application No.:    PCT/JP2017/029280
Publication Date: Fri Feb 23 00:59:59 CET 2018 International Filing Date: Tue Aug 15 01:59:59 CEST 2017
IPC: H01L 31/0224
H01L 31/0747
Applicants: SHARP KABUSHIKI KAISHA
シャープ株式会社
Inventors: HIGO, Teruaki
肥後 輝明
OKAMOTO, Chikao
岡本 親扶
KOBAYASHI, Masamichi
小林 正道
ISHII, Masahito
石井 真人
MORI, Takeshi
森 健史
MATSUMOTO, Yuta
松本 雄太
Title: PHOTOELECTRIC CONVERSION ELEMENT AND PHOTOELECTRIC CONVERSION DEVICE
Abstract:
Provided is a photoelectric conversion element comprising: a p-type or n-type semiconductor substrate (1); a p-type amorphous semiconductor film (3) and n-type amorphous semiconductor film (5) on a first surface side; a p electrode (7) on the p-type amorphous semiconductor film (3); and an n electrode (8) on the n-type amorphous semiconductor film (5). The p electrode (7) and n electrode (8) are arranged with a gap therebetween. The p-type amorphous semiconductor film (3) surrounds the n-type amorphous semiconductor film (5) in the in-plane direction of the semiconductor substrate (1), and an edge part (5a) of the n-type amorphous semiconductor film (5) is a region overlapping with the p-type amorphous semiconductor film (3). The n electrode (8) is positioned on the inner side of a region of the n-type amorphous semiconductor film (5) surrounded by the overlapping region.