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Pub. No.:    WO/2018/034127    International Application No.:    PCT/JP2017/027320
Publication Date: Fri Feb 23 00:59:59 CET 2018 International Filing Date: Fri Jul 28 01:59:59 CEST 2017
IPC: H01L 29/739
H01L 29/06
H01L 29/12
H01L 29/78
Applicants: ROHM CO., LTD.
Inventors: MORI, Seigo
森 誠悟
AKETA, Masatoshi
明田 正俊
[Problem] To provide a semiconductor device capable of establishing both good switching characteristics and good reverse breakdown voltage in both a small current region and a large current region. [Solution] Provided is a semiconductor device that includes: a semiconductor layer having a front surface, a back surface on the reverse side thereto, and an end surface; an MIS transistor structure formed on the front surface part of the semiconductor layer; a first electrically conductive-type part and a second electrically conductive-type part formed adjacent to each other on the back surface side of the semiconductor layer; and a first electrode formed on the back surface of the semiconductor layer, forming a Schottky junction with the first electrically conductive-type part, and forming an ohmic contact with the second electrically conductive-type part.