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1. (WO2018032670) METHOD FOR MANUFACTURING TFT SUBSTRATE

Pub. No.:    WO/2018/032670    International Application No.:    PCT/CN2016/110072
Publication Date: Fri Feb 23 00:59:59 CET 2018 International Filing Date: Fri Dec 16 00:59:59 CET 2016
IPC: H01L 21/77
Applicants: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
深圳市华星光电技术有限公司
Inventors: GAN, Qiming
甘启明
Title: METHOD FOR MANUFACTURING TFT SUBSTRATE
Abstract:
A method for manufacturing a TFT substrate. The method comprises: patterning a passivation layer by means of a halftone mask or a gray-level mask, so that a pixel electrode via hole and the passivation layer with a patterned trench can be manufactured by means of one mask; and directly depositing a transparent conductive material on the passivation layer with the patterned trench to manufacture a pixel electrode. The pixel electrode is patterned without the mask; the manufacturing of the whole TFT substrate can be completed by means of three masks, and does not need an ITO lift-off technique, so that the manufacturing difficulty is low and the efficiency is high.