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Machine translation
1. (WO2018031194) SYSTEMS AND METHODS PROVIDING AN INTERMODULATION DISTORTION SINK
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.:    WO/2018/031194    International Application No.:    PCT/US2017/042395
Publication Date: 15.02.2018 International Filing Date: 17.07.2017
IPC:
H03F 1/32 (2006.01), H03F 1/08 (2006.01), H03F 3/193 (2006.01), H03F 3/30 (2006.01), H03F 3/45 (2006.01), H03H 11/32 (2006.01)
Applicants: QUALCOMM INCORPORATED [US/US]; Attn: International IP Administration 5775 Morehouse Drive San Diego, California 92121-1714 (US)
Inventors: GATHMAN, Timothy Donald; (US).
PATEL, Chirag Dipak; (US).
VUJCIC, Sasha; (US).
TASIC, Aleksandar Miodrag; (US).
CHEN, Wu-Hsin; (US).
VAN ZALINGE, Klaas; (US)
Agent: KELTON, Thomas W.; (US).
WEBB, Gregory P.; (US).
CHEN, Tom; (US).
MICHELSON, Gregory J.; (US).
HALLMAN, Jonathan; (US).
WELCH, Henry L.; (US).
FOWLES, Adam; (US).
NGUYEN, Thuc B.; (US).
EDWARDS, Gary J.; (US).
LI, Eric; (US).
PATTANI, Pranay; (US).
HUH, Gregory; (US)
Priority Data:
62/372,719 09.08.2016 US
62/438,171 22.12.2016 US
15/472,055 28.03.2017 US
Title (EN) SYSTEMS AND METHODS PROVIDING AN INTERMODULATION DISTORTION SINK
(FR) SYSTÈMES ET PROCÉDÉS FOURNISSANT UN PUITS DE DISTORSION D'INTERMODULATION
Abstract: front page image
(EN)A circuit includes an active balun having an RF signal input and having differential signal outputs, the active balun including a first pair of transistors coupled to the RF signal input, the first pair of transistors including a first transistor of a first type and a second transistor of a second type, wherein the first type and second type are complementary; and an intermodulation distortion (IMD) sink circuit having an operational amplifier (op amp) coupled between a first node and a second node, wherein the first transistor and second transistor are coupled in series between the first node and the second node.
(FR)L'invention porte sur un circuit qui comprend un transformateur symétrique-dissymétrique actif ayant une entrée de signal RF et ayant des sorties de signal différentiel, le transformateur symétrique-dissymétrique actif comprenant une première paire de transistors couplés à l'entrée de signal RF, la première paire de transistors comprenant un premier transistor d'un premier type et un second transistor d'un second type, le premier type et le second type étant complémentaires; un circuit à puits de distorsion d'intermodulation (IMD) ayant un amplificateur opérationnel (amp op) couplé entre un premier nœud et un second nœud, le premier transistor et le second transistor étant couplés en série entre le premier nœud et le second nœud.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)