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1. (WO2018030445) CHEMICALLY AMPLIFIED RESIST MATERIAL, AND METHOD FOR FORMING RESIST PATTERN

Pub. No.:    WO/2018/030445    International Application No.:    PCT/JP2017/028854
Publication Date: Fri Feb 16 00:59:59 CET 2018 International Filing Date: Wed Aug 09 01:59:59 CEST 2017
IPC: G03F 7/004
C09K 3/00
G03F 7/039
G03F 7/20
G03F 7/38
Applicants: OSAKA UNIVERSITY
国立大学法人大阪大学
TOKYO ELECTRON LIMITED
東京エレクトロン株式会社
JSR CORPORATION
JSR株式会社
Inventors: TAGAWA Seiichi
田川 精一
OSHIMA Akihiro
大島 明博
NAGAHARA Seiji
永原 誠司
NAKAGAWA Hisashi
中川 恭志
NARUOKA Takehiko
成岡 岳彦
NAGAI Tomoki
永井 智樹
Title: CHEMICALLY AMPLIFIED RESIST MATERIAL, AND METHOD FOR FORMING RESIST PATTERN
Abstract:
Provided are: a chemically amplified resist material which can have high sensitivity and excellent lithographic performance; and a method for forming a resist pattern using the chemically amplified resist material. The chemically amplified resist material according to the present invention comprises (1) a polymer component which becomes soluble or insoluble in a developing solution by the action of an acid, (2) a component which can generate a radiation-sensitive sensitizer and an acid upon the exposure to light and (3) a component which has basicity relative to the acid generated from the component (2), wherein the component (2) contains a component (a) as mentioned below or any two or all of components (a) to (c) as mentioned below, the component (a) or the component (c) comprises a first compound having a radiation-sensitive acid generating group, and the component (3) contains a second compound that is a component (d) as mentioned below: (a) a radiation-sensitive acid-sensitizer generator; (b) a radiation-sensitive sensitizer generator; (c) a radiation-sensitive acid generator; and (d) a radiation-sensitive and photo-degradable base.