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1. (WO2018030352) EPITAXIAL SILICON WAFER, AND METHOD FOR MANUFACTURING EPITAXIAL SILICON WAFER

Pub. No.:    WO/2018/030352    International Application No.:    PCT/JP2017/028620
Publication Date: Fri Feb 16 00:59:59 CET 2018 International Filing Date: Tue Aug 08 01:59:59 CEST 2017
IPC: H01L 21/205
C23C 16/24
C30B 29/06
H01L 21/20
Applicants: SUMCO CORPORATION
株式会社SUMCO
Inventors: NONAKA Naoya
野中 直哉
KAWASHIMA Tadashi
川島 正
OOKUBO Katsuya
大久保 勝也
Title: EPITAXIAL SILICON WAFER, AND METHOD FOR MANUFACTURING EPITAXIAL SILICON WAFER
Abstract:
An epitaxial silicon wafer EW comprises a silicon wafer WF having phosphorus as a dopant and an electric resistivity of less than 1.0 mΩ·cm, the silicon wafer WF having an epitaxial film EP, wherein the silicon wafer WF has a major surface WF1 comprising the (100) surface that is inclined, the [100] axis perpendicular to the (100) surface is inclined by not less than 0°16' and not more than 0°55' in an arbitrary direction with respect to an axis orthogonal to the major surface WF1, and the hillock defect density in the epitaxial silicon wafer EW is not more than one per cm2.