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|1. (WO2018030352) EPITAXIAL SILICON WAFER, AND METHOD FOR MANUFACTURING EPITAXIAL SILICON WAFER|
|Title:||EPITAXIAL SILICON WAFER, AND METHOD FOR MANUFACTURING EPITAXIAL SILICON WAFER|
An epitaxial silicon wafer EW comprises a silicon wafer WF having phosphorus as a dopant and an electric resistivity of less than 1.0 mΩ·cm, the silicon wafer WF having an epitaxial film EP, wherein the silicon wafer WF has a major surface WF1 comprising the (100) surface that is inclined, the  axis perpendicular to the (100) surface is inclined by not less than 0°16' and not more than 0°55' in an arbitrary direction with respect to an axis orthogonal to the major surface WF1, and the hillock defect density in the epitaxial silicon wafer EW is not more than one per cm2.