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1. (WO2018030254) TECHNIQUE FOR SUBSTRATE WASHING AFTER CHEMICAL-MECHANICAL PLANARIZATION
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2018/030254 International Application No.: PCT/JP2017/028180
Publication Date: 15.02.2018 International Filing Date: 03.08.2017
IPC:
H01L 21/304 (2006.01) ,B24B 37/00 (2012.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304
Mechanical treatment, e.g. grinding, polishing, cutting
B PERFORMING OPERATIONS; TRANSPORTING
24
GRINDING; POLISHING
B
MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
37
Lapping machines or devices; Accessories
Applicants: EBARA CORPORATION[JP/JP]; 11-1, Haneda Asahi-cho, Ohta-ku, Tokyo 1448510, JP
Inventors: FUKUNAGA Akira; JP
SHIMA Shohei; JP
WADA Yutaka; JP
Agent: OHNO Seiji; JP
MATSUNO Tomohiro; JP
Priority Data:
2016-15766510.08.2016JP
Title (EN) TECHNIQUE FOR SUBSTRATE WASHING AFTER CHEMICAL-MECHANICAL PLANARIZATION
(FR) TECHNIQUE DE LAVAGE DE SUBSTRATS APRÈS PLANARISATION CHIMICO-MÉCANIQUE
(JA) 化学機械研磨後の基板洗浄技術
Abstract:
(EN) Disclosed is a method for washing a substrate using a washing liquid containing at least any one of the following (A), (B) and (C) after chemical-mechanical planarization of the substrate: (A) a reducing agent having the ability to donate electrons to a metal on the substrate; (B) a deoxidizer for reducing soluble oxygen; and(C) an anti-corrosive agent. Moreover, disclosed are a method for producing a semiconductor device using the foregoing method, a substrate treatment device, and the washing liquid used thereby.
(FR) L'invention concerne un procédé de lavage d'un substrat à l'aide d'un liquide de lavage contenant au moins l'un quelconque des éléments suivants (A), (B) et (C) après la planarisation chimico-mécanique du substrat : (A) un agent réducteur ayant la capacité de donner des électrons à un métal sur le substrat; (B) un oxydant pour réduire l'oxygène soluble; et (C) agent anti-corrosif. En outre, l'invention concerne un procédé de production d'un dispositif à semi-conducteur utilisant le procédé susmentionné, un dispositif de traitement de substrat et le liquide de lavage utilisé par ce procédé.
(JA) 基板を化学機械研磨した後、以下の(A)、(B)および(C)の少なくともいずれか一つを含有する洗浄液で基板を洗浄する、方法を開示する。(A)基板上の金属に対して電子供与性を有する還元剤。(B)溶存酸素を還元する脱酸素剤。(C)防食剤。また、かかる方法を用いた半導体装置の製造方法、基板処理装置、およびこれらに用いる洗浄液を開示する。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)