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1. (WO2018029046) METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT AND AN OPTOELECTRONIC COMPONENT
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2018/029046 International Application No.: PCT/EP2017/069457
Publication Date: 15.02.2018 International Filing Date: 01.08.2017
IPC:
H01L 33/50 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
50
Wavelength conversion elements
Applicants: OSRAM OPTO SEMICONDUCTORS GMBH[DE/DE]; Leibnizstr. 4 93055 Regensburg, DE
Inventors: KUNDALIYA, Darshan; US
O´BRIEN, David; DE
GÖÖTZ, Britta; DE
Agent: EPPING HERMANN FISCHER PATENTANWALTSGESELLSCHAFT MBH; Schloßschmidstr. 5 80639 München, DE
Priority Data:
15/236,37912.08.2016US
Title (EN) METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT AND AN OPTOELECTRONIC COMPONENT
(FR) PROCÉDÉ DE PRODUCTION D'UN COMPOSANT OPTOÉLECTRONIQUE ET COMPOSANT OPTOÉLECTRONIQUE
Abstract:
(EN) The invention relates to a method for producing an optoelectronic component comprising the steps of: A) providing an auxiliary carrier; B) applying a sacrificial layer on the auxiliary carrier; C) applying a converter layer on the sacrificial layer, which comprises quantum dots embedded in a matrix material or a luminescent polymer; D) providing a semiconductor layer sequence; E) optionally applying an adhesive layer on the semiconductor layer sequence; F) optionally bonding the converter layer on the semiconductor layer sequence by means of an adhesive layer, wherein the semiconductor layer sequence is configured to emit radiation; G) removing the auxiliary carrier by means of optical, mechanical and/or chemical treatment and at least partially destroying the sacrificial layer.
(FR) L'invention concerne un procédé de production d'un composant optoélectronique comprenant les étapes consistant à : A) fournir un support auxiliaire; B) appliquer une couche sacrificielle sur le support auxiliaire; C) appliquer une couche de convertisseur sur la couche sacrificielle, qui comprend des points quantiques incorporés dans un matériau de matrice ou un polymère luminescent; D) fournir une séquence de couches semi-conductrices; E) éventuellement appliquer une couche adhésive sur la séquence de couches semi-conductrices; F) éventuellement lier la couche de conversion sur la séquence de couches semi-conductrices au moyen d'une couche adhésive, la séquence de couches semi-conductrices étant configurée pour émettre un rayonnement; G) éliminer le support auxiliaire au moyen d'un traitement optique, mécanique et/ou chimique et détruire au moins partiellement la couche sacrificielle.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)