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1. (WO2018028982) METHOD FOR PRODUCING AN EPITAXIAL LAYER ON A GROWTH PLATE
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Pub. No.: WO/2018/028982 International Application No.: PCT/EP2017/068807
Publication Date: 15.02.2018 International Filing Date: 25.07.2017
IPC:
H01L 21/02 (2006.01) ,H01L 21/033 (2006.01) ,H01L 21/20 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
027
Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
033
comprising inorganic layers
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
Applicants:
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES [FR/FR]; 25 rue Leblanc Bâtiment "Le Ponant D" 75015 PARIS, FR
Inventors:
MORICEAU, Hubert; FR
CHARLES, Matthew; FR
MORALES, Christophe; FR
Agent:
BRONCHART, Quentin; FR
Priority Data:
16 5771211.08.2016FR
Title (EN) METHOD FOR PRODUCING AN EPITAXIAL LAYER ON A GROWTH PLATE
(FR) PROCÉDÉ DE FABRICATION D'UNE COUCHE ÉPITAXIÉE SUR UNE PLAQUE DE CROISSANCE
Abstract:
(EN) The present invention relates to the management of the quality of deposition of an epitaxial layer 4 of gallium nitride, for example, on a growth plate 2 of silicon, for example, in particular at the level of the plate edges. The invention particularly aims to reduce the complexity and the production cost of known solutions. The production method according to the invention utilises the existence of a bevel on each growth plate 2 and provides an auto-positioned deposition 140 of a protective film 3 on at least one section of the bevel using a mechanical mask that prevents the deposition 140 of the protective film 3 on the epitaxially-useful zone Zu.
(FR) La présente invention concerne la maîtrise de la qualité de dépôt d'une couche épitaxiée 4, par exemple de nitrure de gallium,sur une plaque de croissance 2, par exemple de silicium, en particulier au niveau des bords de la plaque. L'invention vise notamment à réduire la complexité et le coût de fabrication des solutions connues. Le procédé de fabrication selon l'invention met à profit l'existence d'un chanfrein sur chaque plaque de croissance 2 et prévoit un dépôt 140 auto-positionné d'un film de protection 3 sur au moins une partie du chanfrein grâce à un masque mécanique empêchant le dépôt 140 du film de protection 3sur la zone utile Zu à l'épitaxie.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: French (FR)
Filing Language: French (FR)