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1. (WO2018028872) SYSTEM AND METHOD FOR GAS PHASE DEPOSITION

Pub. No.:    WO/2018/028872    International Application No.:    PCT/EP2017/065829
Publication Date: Fri Feb 16 00:59:59 CET 2018 International Filing Date: Wed Jun 28 01:59:59 CEST 2017
IPC: C23C 16/455
C23C 16/458
H01L 21/683
H01J 37/32
Applicants: SINGULUS TECHNOLOGIES AG
Inventors: IVANOV, Alexey
KLEPL, Andreas
RICHTER, Johannes
Title: SYSTEM AND METHOD FOR GAS PHASE DEPOSITION
Abstract:
A system (1) for gas phase deposition comprises a gas injector (30) configured to process gases to a substrate (10) for gas phase deposition onto the substrate (10). The gas injector (30) comprises a first flow path (31) and a second flow path (41) different from the first flow path (31). The system (1) comprises a first temperature adjustment mechanism (6) associated with the first flow path (31) to control a temperature of a process gas passing through the first flow path (31). The system (1) comprises a second temperature adjustment mechanism (7) associated with at least the second flow path (41) to control a temperature of a process gas passing through the second flow path (41). The first temperature adjustment mechanism (6) and the second temperature adjustment mechanism (7) are operable independently of each other. The system is configured to cause rotation and levitation of the substrate (10) during etching of the substrate (10) and/or deposition.