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1. (WO2018026634) MULTI-JUNCTION DETECTOR DEVICE AND METHOD OF USE
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Pub. No.: WO/2018/026634 International Application No.: PCT/US2017/044262
Publication Date: 08.02.2018 International Filing Date: 27.07.2017
IPC:
H01L 31/111 (2006.01) ,H01L 31/0203 (2006.01) ,H01L 31/0304 (2006.01) ,H01L 31/032 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08
in which radiation controls flow of current through the device, e.g. photoresistors
10
characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
101
Devices sensitive to infra-red, visible or ultra-violet radiation
111
characterised by at least three potential barriers, e.g. photothyristor
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
Details
0203
Containers; Encapsulations
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248
characterised by their semiconductor bodies
0256
characterised by the material
0264
Inorganic materials
0304
including, apart from doping materials or other impurities, only AIIIBV compounds
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248
characterised by their semiconductor bodies
0256
characterised by the material
0264
Inorganic materials
032
including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272-H01L31/0312154
Applicants:
NEWPORT CORPORATION [US/US]; 1791 Deere Avenue Irvine, California 92606, US
Inventors:
SWITZER, Greggory; US
Agent:
TRASK, Edward; US
Priority Data:
62/370,20402.08.2016US
Title (EN) MULTI-JUNCTION DETECTOR DEVICE AND METHOD OF USE
(FR) DISPOSITIF DE DÉTECTION À JONCTION MULTIPLES ET PROCÉDÉ D'UTILISATION
Abstract:
(EN) A novel multi-junction detector device and method of use is disclosed, which includes a housing, at least one mount system body positioned within the housing, at least one beam dump region formed in the mount system body, with a first detector having a first wavelength responsivity range positioned on the mount system body and at least a second detector having a second wavelength responsivity range positioned on the mount system body in optical communication with the first detector.
(FR) L'invention porte sur un nouveau dispositif de détection à jonctions multiples et sur son procédé d'utilisation, qui comprend un boîtier, au moins un corps de système de montage positionné à l'intérieur du boîtier, au moins une région de décharge de faisceau formée dans le corps de système de montage, avec un premier détecteur ayant une première plage de sensibilité de longueur d'onde positionnée sur le corps de système de montage et au moins un second détecteur ayant une seconde plage de sensibilité de longueur d'onde positionnée sur le corps de système de montage en communication optique avec le premier détecteur.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)