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1. (WO2018026412) FABRICATION METHOD FOR DIGITAL ETCHING OF NANOMETER-SCALE LEVEL STRUCTURES
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.:    WO/2018/026412    International Application No.:    PCT/US2017/033005
Publication Date: 08.02.2018 International Filing Date: 17.05.2017
IPC:
G02B 3/08 (2006.01), G02B 1/10 (2006.01), G02B 27/09 (2006.01)
Applicants: THE GOVERNMENT OF THE UNITED STATES OF AMERICA, as represented by THE SECRETARY OF THE NAVY NAVAL RESEARCH LABORATORY [US/US]; 4555 Overlook Avenue, SW, Code 1008.2 Washington, DC 201375 (US)
Inventors: CHRISTOPHERSEN, Marc; (US).
PHLIPS, Bernard, F.; (US).
YETZBACHER, Michael, K.; (US)
Agent: BROOME, Kerry, L.; (US)
Priority Data:
62/369,812 02.08.2016 US
Title (EN) FABRICATION METHOD FOR DIGITAL ETCHING OF NANOMETER-SCALE LEVEL STRUCTURES
(FR) PROCÉDÉ DE FABRICATION DESTINÉ À UNE GRAVURE NUMÉRIQUE DE STRUCTURES DE NIVEAU ÉCHELLE NANOMÉTRIQUE
Abstract: front page image
(EN)A device includes a surface profile optical element, including a substrate and a plurality of bi-Iayer stacks on the substrate. Each bi-layer stack of the plurality of bi-layer stacks includes- a plurality of bi-layers. Each bi-layer of the plurality of bi-layers includes an etch-Stop layer and a bulk layer. The etch stop layer includes an etch stop layer index of refraction. The bulk layer includes a bulk layer index of refraction. A ratio of the etch stop layer index of refraction: and the bulk layer index of refraction is between 0.75 and 1.25.
(FR)L'invention concerne un dispositif comprenant un élément optique à profil de surface, comprenant un substrat et une pluralité d'empilements bicouches sur le substrat. Chaque empilement bicouches de la pluralité d'empilements bicouches comprend une pluralité de bicouches. Chaque bicouche de la pluralité de bicouches comprend une couche d'arrêt de gravure et une couche en masse. La couche d'arrêt de gravure comprend un indice de réfraction de couche d'arrêt de gravure. La couche en masse comprend un indice de réfraction de couche en masse. Un rapport de l'indice de réfraction de la couche d'arrêt de gravure et de l'indice de réfraction de la couche en masse se situe entre 0,75 et 1,25.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)