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1. (WO2018025780) RING FOR ELECTRODE
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Pub. No.: WO/2018/025780 International Application No.: PCT/JP2017/027559
Publication Date: 08.02.2018 International Filing Date: 28.07.2017
IPC:
H01L 21/3065 (2006.01) ,H05H 1/46 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306
Chemical or electrical treatment, e.g. electrolytic etching
3065
Plasma etching; Reactive-ion etching
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
H
PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY- CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
1
Generating plasma; Handling plasma
24
Generating plasma
46
using applied electromagnetic fields, e.g. high frequency or microwave energy
Applicants:
日本新工芯技株式会社 THINKON NEW TECHNOLOGY JAPAN CORPORATION [JP/JP]; 東京都練馬区豊玉北四丁目30番10号 30-10, Toyotamakita 4-chome, Nerima-ku, Tokyo 1760012, JP
Inventors:
碇 敦 IKARI Atsushi; JP
藤井 智 FUJII Satoshi; JP
Agent:
吉田 正義 YOSHIDA Tadanori; JP
Priority Data:
2016-15398604.08.2016JP
Title (EN) RING FOR ELECTRODE
(FR) ANNEAU POUR ÉLECTRODE
(JA) 電極用リング
Abstract:
(EN) This invention is characterized in being provided with three or more arcuate silicon members (38) and a joining part for joining the silicon members (38), the joining part containing boron oxide.
(FR) Cette invention est caractérisée en ce qu'elle comporte au moins trois éléments en silicium arqués (38) et une partie de jonction pour relier les éléments en silicium (38), la partie de jonction contenant de l'oxyde de bore.
(JA) 3個以上の円弧状シリコン部材(38)と、前記シリコン部材(38)同士を接合する接合部とを備え、前記接合部は、酸化ホウ素を含有することを特徴とする。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)