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1. (WO2018025647) SEMICONDUCTOR DEVICE, PH SENSOR, BIOSENSOR, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
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Pub. No.:    WO/2018/025647    International Application No.:    PCT/JP2017/026223
Publication Date: 08.02.2018 International Filing Date: 20.07.2017
IPC:
H01L 29/786 (2006.01), G01N 27/414 (2006.01)
Applicants: NIKON CORPORATION [JP/JP]; 15-3, Konan 2-chome, Minato-ku, Tokyo 1086290 (JP)
Inventors: NAKAZUMI Makoto; (JP).
NISHI Yasutaka; (JP)
Agent: SHOYO INTELLECTUAL PROPERTY FIRM; 6F, Tobu Yokohama 2ND Bldg., 15-1, Kitasaiwai 2-chome, Nishi-ku, Yokohama-shi, Kanagawa 2200004 (JP)
Priority Data:
2016-152721 03.08.2016 JP
Title (EN) SEMICONDUCTOR DEVICE, PH SENSOR, BIOSENSOR, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
(FR) DISPOSITIF À SEMI-CONDUCTEUR, CAPTEUR DE PH, BIOCAPTEUR, ET PROCÉDÉ DE PRODUCTION DE DISPOSITIF À SEMI-CONDUCTEUR
(JA) 半導体装置、pHセンサ、バイオセンサ、及び半導体装置の製造方法
Abstract: front page image
(EN)Provided is a semiconductor device characterized by comprising a first electrode, a second electrode, and a semiconductor layer in contact with the first electrode and the second electrode, and by the semiconductor layer being a spinel oxide containing zinc (Zn) and gallium (Ga).
(FR)La présente invention concerne un dispositif à semi-conducteur caractérisé en ce qu'il comprend une première électrode, une seconde électrode et une couche semi-conductrice en contact avec la première électrode et la seconde électrode, et la couche semi-conductrice étant un oxyde de type spinelle contenant du zinc (Zn) et du gallium (Ga).
(JA)第1の電極と、第2の電極と、第1の電極と第2の電極とに接する半導体層と、を有し、半導体層は、亜鉛(Zn)とガリウム(Ga)とを含むスピネル型の酸化物であることを特徴とする半導体装置の提供。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)