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1. (WO2018022719) COMPOSITIONS AND METHODS USING SAME FOR CARBON DOPED SILICON CONTAINING FILMS
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.:    WO/2018/022719    International Application No.:    PCT/US2017/043890
Publication Date: 01.02.2018 International Filing Date: 26.07.2017
IPC:
C23C 16/34 (2006.01), C23C 16/36 (2006.01), C23C 16/455 (2006.01), C23C 16/40 (2006.01), H01L 21/02 (2006.01)
Applicants: VERSUM MATERIALS US, LLC [US/US]; 8555 S. River Parkway Tempe, AZ 85284 (US)
Inventors: CHANDRA, Haripin; (US).
LEI, Xinjian; (US).
MALLIKARJUNAN, Anupama; (US).
KIM, Moo-Sung; (KR)
Agent: ROSSI, Joseph, D.; (US).
SPLETZER, Christopher, M.; (US).
FITZGIBBON, David, P.; (US).
CASEY, Kevin, R.; (US).
O'DONOGHUE, Elizabeth, M.; (US).
LEGAARD, Paul; (US).
FORET, Philip, J.; (US)
Priority Data:
62/367,260 27.07.2016 US
15/654,426 19.07.2017 US
Title (EN) COMPOSITIONS AND METHODS USING SAME FOR CARBON DOPED SILICON CONTAINING FILMS
(FR) COMPOSITIONS ET PROCÉDÉS LES METTANT EN OEUVRE POUR FILMS CONTENANT DU SILICIUM DOPÉ AU CARBONE
Abstract: front page image
(EN)A composition and method for using the composition in the fabrication of an electronic device are disclosed. Compounds, compositions and methods for depositing a low dielectric constant (< 4.0) and high oxygen ash resistance silicon-containing film such as, without limitation, a carbon doped silicon oxide, are disclosed.
(FR)L'invention concerne une composition et un procédé faisant appel à ladite composition dans la fabrication d'un dispositif électronique. L'invention concerne également des composés, des compositions et des procédés pour déposer un film contenant du silicium à faible constante diélectrique (< 4,0) et à haute résistance à la calcination à l'oxygène, tel que, mais non exclusivement, un oxyde de silicium dopé au carbone.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)