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1. (WO2018022340) MONOLITHIC MICROWAVE INTEGRATED CIRCUIT (MMIC) AND METHOD FOR FORMING SUCH MMIC HAVING RAPID THERMAL ANNEALING COMPENSATION ELEMENTS

Pub. No.:    WO/2018/022340    International Application No.:    PCT/US2017/042345
Publication Date: Fri Feb 02 00:59:59 CET 2018 International Filing Date: Tue Jul 18 01:59:59 CEST 2017
IPC: H01L 21/285
H01L 21/324
H01L 23/66
H01L 27/06
Applicants: RAYTHEON COMPANY
Inventors: ALTUNKILIC, Fikret
WILLIAMS, Adrian, D.
MACDONALD, Christolpher, J.
TABATABAIE ALAVI, Kamal
Title: MONOLITHIC MICROWAVE INTEGRATED CIRCUIT (MMIC) AND METHOD FOR FORMING SUCH MMIC HAVING RAPID THERMAL ANNEALING COMPENSATION ELEMENTS
Abstract:
A method and structure, the structure having a substrate, an active device in an active device semiconductor region; of the substrate, a microwave transmission line, on the substrate, electrically connected to the active device, and microwave energy absorbing "dummy" fill elements on the substrate. The method includes providing a structure having a substrate, an active device region on a surface of the structure, an ohmic contact material on the active device region, and a plurality of "dummy" fill elements on the surface to provide uniform heating of the substrate during a rapid thermal anneal process, the ohmic contact material and the "dummy" fill elements having the same radiant energy reflectivity. The rapid thermal anneal processing forms an ohmic contact between an ohmic contact material and the active device region and simultaneously converts the "dummy" fill elements into microwave lossy "dummy" fill elements.