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1. (WO2018022154) RUGGED, SINGLE CRYSTAL WIDE-BAND-GAP-MATERIAL-SCANNING-TUNNELING MICROSCOPY/LITHOGRAPHY TIPS
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.:    WO/2018/022154    International Application No.:    PCT/US2017/029180
Publication Date: 01.02.2018 International Filing Date: 24.04.2017
IPC:
G01Q 70/08 (2010.01), G01Q 70/16 (2010.01), B82Y 35/00 (2011.01)
Applicants: STC. UNM [US/US]; 801 University Blvd., SE, Suite 101 Albuquerque, NM 87106 (US)
Inventors: BRUECK, Steven, R.J.; (US).
FEEZELL, Daniel; (US).
RANDALL, John; (US).
BUSANI, Tito; (US).
BALLARD, Joshua, B.; (US).
BEHZADIRAD, Mahmoud; (US).
RISHINARAMANGALAM, Ashwin Krishnan; (US)
Agent: HSIEH, Timothy, M.; (US)
Priority Data:
62/327,294 25.04.2016 US
Title (EN) RUGGED, SINGLE CRYSTAL WIDE-BAND-GAP-MATERIAL-SCANNING-TUNNELING MICROSCOPY/LITHOGRAPHY TIPS
(FR) POINTES DE LITHOGRAPHIE/MICROSCOPIE À BALAYAGE À EFFET TUNNEL À MATÉRIAU MONOCRISTALLIN À LARGE BANDE INTERDITE ROBUSTE
Abstract: front page image
(EN)Provided is a composite metal-wide-bandgap semiconductor tip for scanning tunneling microscopy and/or scanning, tunneling lithography, a method of forming, and a method for using the composite metal-wide-bandgap semiconductor tip.
(FR)L'invention concerne une pointe semi-conductrice composite à large bande interdite métallique pour microscopie à balayage à effet tunnel et/ou pour lithographie à balayage à effet tunnel, un procédé de formation, et un procédé d'utilisation de la pointe semi-conductrice à large bande interdite composite.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)