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1. (WO2018021259) INFRARED LIGHT ELEMENT
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Pub. No.: WO/2018/021259 International Application No.: PCT/JP2017/026743
Publication Date: 01.02.2018 International Filing Date: 24.07.2017
IPC:
H01S 1/02 (2006.01) ,G02F 1/35 (2006.01) ,H01L 31/08 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
1
Masers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of electromagnetic waves of wavelength longer than that of infra-red waves
02
solid
G PHYSICS
02
OPTICS
F
DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1
Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
35
Non-linear optics
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08
in which radiation controls flow of current through the device, e.g. photoresistors
Applicants:
国立大学法人千葉大学 NATIONAL UNIVERSITY CORPORATION CHIBA UNIVERSITY [JP/JP]; 千葉県千葉市稲毛区弥生町1番33号 1-33, Yayoi-cho, Inage-ku, Chiba-shi, Chiba 2638522, JP
Inventors:
石谷 善博 ISHITANI Yoshihiro; JP
Agent:
高橋 昌義 TAKAHASHI Masayoshi; JP
Priority Data:
2016-14497423.07.2016JP
Title (EN) INFRARED LIGHT ELEMENT
(FR) ÉLÉMENT À LUMIÈRE INFRAROUGE
(JA) 赤外光素子
Abstract:
(EN) Provided is a compact infrared light element that performs light emission or detection in the infrared to Thz region and operates at room temperature. An infrared light element according to one aspect of the present invention is obtained by forming striped, lattice-shaped, or ring-shaped conductors on a semiconductor or insulator substrate, the intervals therebetween being no more than 1/2 the wavelength of infrared light that resonates with the longitudinal optical (LO) phonon energy, and the infrared light element emits or detects infrared light that resonates with said mode. An infrared light element according to another aspect of the present invention is obtained by forming striped, lattice-shaped, or ring-shaped conductors on a semiconductor or insulator substrate, the intervals therebetween being no more than 1/2 the wavelength of infrared light that resonates with the LO phonon-plasmon coupled (LOPC) mode energy, and the infrared light element emits or detects infrared light that resonates with said mode.
(FR) L'invention concerne un élément compact à lumière infrarouge qui procède à l'émission et à la détection de lumière dans la zone entre les infrarouges et les THz et qui fonctionne à température ambiante. Un élément à lumière infrarouge selon un aspect de la présente invention est obtenu en formant des conducteurs rayés, en forme de réseau, ou annulaires sur un substrat semi-conducteur ou isolant, les intervalles entre eux n'étant pas supérieurs à 1/2 la longueur d'onde de lumière infrarouge qui résonne avec l'énergie de phonons optiques longitudinaux (LO), et l'élément à lumière infrarouge émet ou détecte la lumière infrarouge qui résonne avec ledit mode. Un élément à lumière infrarouge selon un autre aspect de la présente invention est obtenu en formant des conducteurs rayés, en forme de réseau, ou annulaires sur un substrat semi-conducteur ou isolant, les intervalles entre eux n'étant pas supérieurs à 1/2 la longueur d'onde de lumière infrarouge qui résonne avec un mode d'énergie couplé phonons LO-plasmon (LOPC), et l'élément à lumière infrarouge émet ou détecte la lumière infrarouge qui résonne avec ledit mode.
(JA) 赤外からTHz領域で室温において動作するコンパクトな発光又は検出を行う赤外光素子を提供する。そのため、本発明の一観点に係る赤外光素子は、半導体又は絶縁体の基板に、ストライプ状、格子状又は円環状の導電体が形成され、その間隔が縦光学(LO)フォノンエネルギーに共鳴する赤外光の1/2波長以下であって、当該モードに共鳴する赤外光を発光する又は検出するものである。また、本発明の他の一観点に係る赤外光素子は、半導体又は絶縁体の基板に、ストライプ状、格子状又は円環状の導電体が形成され、その間隔がLOフォノン-プラズモンの結合(LOPC)モードエネルギーに共鳴する赤外光の1/2波長以下であって、当該モードに共鳴する赤外光を発光する又は検出するものである。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)