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1. (WO2018021145) METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Pub. No.:    WO/2018/021145    International Application No.:    PCT/JP2017/026294
Publication Date: Fri Feb 02 00:59:59 CET 2018 International Filing Date: Fri Jul 21 01:59:59 CEST 2017
IPC: H01L 21/304
C09J 7/02
C09J 11/02
C09J 199/00
Applicants: MITSUI CHEMICALS TOHCELLO, INC.
三井化学東セロ株式会社
Inventors: KURIHARA Hiroyoshi
栗原 宏嘉
Title: METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Abstract:
This method for manufacturing a semiconductor device comprises at least the following three steps: (A) a step for preparing a structure which comprises a semiconductor wafer having a circuit formation surface and an adhesive film (100) that is bonded to the circuit formation surface of the semiconductor wafer; (B) a step for back grinding a surface of the semiconductor wafer, said surface being on the reverse side of the circuit formation surface; and (C) a step for removing the adhesive film (100) from the semiconductor wafer after irradiating the adhesive film (100) with ultraviolet light. An adhesive film which sequentially comprises a base layer (10), an antistatic layer (30) and an adhesive resin layer (40) containing a conductive additive in this order is used as the adhesive film (100) in such a manner that the adhesive resin layer (40) is on the circuit formation surface of the semiconductor wafer.