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1. (WO2018021117) SEMICONDUCTOR ELEMENT PRODUCTION METHOD AND SOLAR CELL PRODUCTION METHOD

Pub. No.:    WO/2018/021117    International Application No.:    PCT/JP2017/026143
Publication Date: Fri Feb 02 00:59:59 CET 2018 International Filing Date: Thu Jul 20 01:59:59 CEST 2017
IPC: H01L 21/225
H01L 31/18
Applicants: TORAY INDUSTRIES, INC.
東レ株式会社
Inventors: KITADA, Tsuyoshi
北田 剛
SHIRASAWA, Nobuhiko
白沢 信彦
MURASE, Seiichiro
村瀬 清一郎
Title: SEMICONDUCTOR ELEMENT PRODUCTION METHOD AND SOLAR CELL PRODUCTION METHOD
Abstract:
The semiconductor element production method according to one embodiment includes a film layer formation step and a diffusion step. In the film layer formation step, an A film and a B film are formed on a semiconductor substrate. The A film is an impurity diffusion composition film that is formed using a composition A that contains an impurity diffusion component. The B film is an air diffusion suppression layer that suppresses the air diffusion of the impurity diffusion component from at least the A film and that is formed using a composition B that contains a polysiloxane. In the diffusion step, the semiconductor substrate on which the A film and the B film are formed is heat treated, and the impurity diffusion component is thereby diffused into the semiconductor substrate. This semiconductor element production method is for use in a solar cell production method.