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|1. (WO2018021105) Cu-Ga SPUTTERING TARGET AND METHOD FOR PRODUCING Cu-Ga SPUTTERING TARGET|
|Applicants:||MITSUBISHI MATERIALS CORPORATION
|Title:||Cu-Ga SPUTTERING TARGET AND METHOD FOR PRODUCING Cu-Ga SPUTTERING TARGET|
This Cu-Ga sputtering target has a composition that contains, as a metal component, Ga in an amount of from 5 atom% to 60 atom% (inclusive), while containing at least one additional element selected from the group consisting of K, Rb and Cs in an amount of from 0.01 atom% to 5 atom% (inclusive), with the balance made up of Cu and unavoidable impurities. All or some of the additional element is present in the form of halide particles that contain at least one halogen element selected from the group consisting of F, Cl, Br and I; the maximum particle diameter of the halide particles is set to be 15 μm or less; and the oxygen concentration is set to be 1,000 ppm by mass or less.