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1. (WO2018021105) Cu-Ga SPUTTERING TARGET AND METHOD FOR PRODUCING Cu-Ga SPUTTERING TARGET

Pub. No.:    WO/2018/021105    International Application No.:    PCT/JP2017/026073
Publication Date: Fri Feb 02 00:59:59 CET 2018 International Filing Date: Thu Jul 20 01:59:59 CEST 2017
IPC: C23C 14/34
B22F 1/00
C22C 1/04
C22C 9/00
C22C 28/00
C22C 30/02
H01L 31/0749
H01L 31/18
Applicants: MITSUBISHI MATERIALS CORPORATION
三菱マテリアル株式会社
Inventors: UMEMOTO Keita
梅本 啓太
IO Kensuke
井尾 謙介
ZHANG Shoubin
張 守斌
SHIONO Ichiro
塩野 一郎
Title: Cu-Ga SPUTTERING TARGET AND METHOD FOR PRODUCING Cu-Ga SPUTTERING TARGET
Abstract:
This Cu-Ga sputtering target has a composition that contains, as a metal component, Ga in an amount of from 5 atom% to 60 atom% (inclusive), while containing at least one additional element selected from the group consisting of K, Rb and Cs in an amount of from 0.01 atom% to 5 atom% (inclusive), with the balance made up of Cu and unavoidable impurities. All or some of the additional element is present in the form of halide particles that contain at least one halogen element selected from the group consisting of F, Cl, Br and I; the maximum particle diameter of the halide particles is set to be 15 μm or less; and the oxygen concentration is set to be 1,000 ppm by mass or less.