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1. (WO2018020913) MASK BLANK, TRANSFER MASK, METHOD FOR PRODUCING TRANSFER MASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2018/020913 International Application No.: PCT/JP2017/022984
Publication Date: 01.02.2018 International Filing Date: 22.06.2017
IPC:
G03F 1/58 (2012.01) ,G03F 1/78 (2012.01) ,H01L 21/3065 (2006.01)
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
1
Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
54
Absorbers, e.g. opaque materials
58
having two or more different absorber layers, e.g. stacked multilayer absorbers
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
1
Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
68
Preparation processes not covered by groups G03F1/20-G03F1/5096
76
Patterning of masks by imaging
78
by charged particle beam [CPB], e.g. electron beam
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306
Chemical or electrical treatment, e.g. electrolytic etching
3065
Plasma etching; Reactive-ion etching
Applicants:
HOYA株式会社 HOYA CORPORATION [JP/JP]; 東京都新宿区西新宿六丁目10番1号 6-10-1 Nishi-Shinjuku, Shinjuku-ku, Tokyo 1608347, JP
Inventors:
宍戸 博明 SHISHIDO, Hiroaki; JP
堀込 康隆 HORIGOME, Yasutaka; JP
Agent:
池田 憲保 IKEDA, Noriyasu; JP
佐々木 敬 SASAKI, Takashi; JP
Priority Data:
2016-14529825.07.2016JP
Title (EN) MASK BLANK, TRANSFER MASK, METHOD FOR PRODUCING TRANSFER MASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
(FR) ÉBAUCHE DE MASQUE, MASQUE DE TRANSFERT, PROCÉDÉ DE PRODUCTION DE MASQUE DE TRANSFERT ET PROCÉDÉ DE FABRICATION DE DISPOSITIF À SEMI-CONDUCTEUR
(JA) マスクブランク、転写用マスク、転写用マスクの製造方法及び半導体デバイスの製造方法
Abstract:
(EN) This mask blank is provided with a light blocking film on a light transmitting substrate. The light blocking film has an optical density of 2.5 or more with respect to ArF excimer laser exposure light, and has a structure that comprises three or more multilayer structures, each of which is composed of a high nitride layer and a low nitride layer. The high nitride layer and the low nitride layer are formed from a material that is composed of silicon and nitrogen or a material that contains one or more elements selected from among semimetal elements and non-metal elements in addition to silicon and nitrogen. The high nitride layer has a nitrogen content of 50 atom% or more, and has a thickness of 10 nm or more. The low nitride layer has a nitrogen content of less than 50 atom%, and has a thickness that is not less than twice the thickness of the high nitride layer.
(FR) Cette invention concerne une ébauche de masque pourvue d'un film de blocage de la lumière sur un substrat transmettant la lumière. Le film de blocage de la lumière a une densité optique de 2,5 ou plus par rapport à la lumière d'exposition d'un laser à excimère ArF, et il présente une structure qui comprend au moins trois structures multicouches, dont chacune est composée d'une couche à haute teneur en nitrure et d'une couche à faible teneur en nitrure. La couche à haute teneur en nitrure et la couche de à faible teneur en nitrure sont formées à partir d'un matériau qui est composé de silicium et d'azote ou d'un matériau qui contient un ou plusieurs éléments choisis parmi des éléments semi-métalliques et des éléments non métalliques en plus du silicium et de l'azote. La couche à haute teneur en nitrure a une teneur en azote de 50 % at. ou plus, et elle a une épaisseur de 10 nm ou plus. La couche à faible teneur en nitrure a une teneur en azote inférieure à 50 % at., et elle a une épaisseur qui n'est pas inférieure à deux fois l'épaisseur de la couche à haute teneur en nitrure.
(JA) 本発明によるマスクブランクは、透光性基板上に遮光膜を備える。遮光膜は、ArFエキシマレーザーの露光光に対する光学濃度が2.5以上であり、高窒化層と低窒化層とからなる1組の積層構造を3組以上有する構造を含む。高窒化層および低窒化層は、ケイ素及び窒素からなる材料、または前記材料に半金属元素および非金属元素から選ばれる1以上の元素を含有する材料で形成される。高窒化層は、窒素の含有量が50原子%以上で、厚さが10nm以上である。低窒化層は、窒素の含有量が50原子%未満であり、厚さが前記高窒化層の厚さの2倍以上である。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)