Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2018020835) PHOTOELECTRIC CONVERSION ELEMENT, IMAGING ELEMENT, OPTICAL SENSOR, AND COMPOUND
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2018/020835 International Application No.: PCT/JP2017/020736
Publication Date: 01.02.2018 International Filing Date: 05.06.2017
IPC:
H01L 31/10 (2006.01) ,C07D 471/04 (2006.01) ,H01L 27/14 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08
in which radiation controls flow of current through the device, e.g. photoresistors
10
characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
C CHEMISTRY; METALLURGY
07
ORGANIC CHEMISTRY
D
HETEROCYCLIC COMPOUNDS
471
Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/-C07D463/251
02
in which the condensed system contains two hetero rings
04
Ortho-condensed systems
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14
including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
Applicants:
富士フイルム株式会社 FUJIFILM CORPORATION [JP/JP]; 東京都港区西麻布2丁目26番30号 26-30, Nishiazabu 2-chome, Minato-ku, Tokyo 1068620, JP
Inventors:
吉岡 知昭 YOSHIOKA Tomoaki; JP
Agent:
中島 順子 NAKASHIMA Junko; JP
米倉 潤造 YONEKURA Junzo; JP
村上 泰規 MURAKAMI Yasunori; JP
Priority Data:
2016-14763827.07.2016JP
Title (EN) PHOTOELECTRIC CONVERSION ELEMENT, IMAGING ELEMENT, OPTICAL SENSOR, AND COMPOUND
(FR) ÉLÉMENT DE CONVERSION PHOTOÉLECTRIQUE, ÉLÉMENT D'IMAGERIE, CAPTEUR OPTIQUE, ET COMPOSÉ
(JA) 光電変換素子、撮像素子、光センサ、化合物
Abstract:
(EN) Provided are: a photoelectric conversion element having excellent responsiveness; an imaging element including the photoelectric conversion element; an optical sensor; and a compound. The photoelectric conversion element has a conductive film, a photoelectric conversion film, and a transparent conductive film, in this order. The photoelectric conversion film includes a compound indicated by formula (1).
(FR) L'invention concerne : un élément de conversion photoélectrique ayant une excellente réactivité; un élément d'imagerie comprenant l'élément de conversion photoélectrique; un capteur optique; et un composé. L'élément de conversion photoélectrique comporte un film conducteur, un film de conversion photoélectrique et un film conducteur transparent, dans cet ordre. Le film de conversion photoélectrique comprend un composé représenté par la formule (1).
(JA) 優れた応答性を示す光電変換素子、光電変換素子を含む撮像素子および光センサ、ならびに、化合物を提供する。光電変換素子は、導電性膜、光電変換膜、および、透明導電性膜をこの順で有し、光電変換膜が、式(1)で表される化合物を含む。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)