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1. (WO2018020780) SUBSTRATE JOINING METHOD
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.:    WO/2018/020780    International Application No.:    PCT/JP2017/018186
Publication Date: 01.02.2018 International Filing Date: 15.05.2017
IPC:
H01L 21/02 (2006.01), B23K 20/00 (2006.01), B23K 20/24 (2006.01), H01L 21/302 (2006.01), H01L 21/3065 (2006.01)
Applicants: MITSUBISHI HEAVY INDUSTRIES MACHINE TOOL CO., LTD. [JP/JP]; 130, Rokujizo, Ritto-shi, Shiga 5203080 (JP).
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY [JP/JP]; 3-1, Kasumigaseki 1-chome, Chiyoda-ku, Tokyo 1008921 (JP)
Inventors: UTSUMI, Jun; (JP).
IDE, Kensuke; (JP).
SUZUKI, Takenori; (JP).
GOTO, Takayuki; (JP).
TAKAGI, Hideki; (JP).
KURASHIMA, Yuuichi; (JP)
Agent: MITSUISHI, Toshiro; (JP).
MITSUISHI, Shumpei; (JP).
TANAKA, Yasuyuki; (JP).
MATSUMOTO, Hiroshi; (JP).
YAMADA, Tetsuzo; (JP)
Priority Data:
2016-149295 29.07.2016 JP
Title (EN) SUBSTRATE JOINING METHOD
(FR) PROCÉDÉ DE JONCTION DE SUBSTRAT
(JA) 基材接合方法
Abstract: front page image
(EN)Provided is a substrate joining method for joining a first substrate (11) and a second substrate (12) by sputter-etching, the substrate joining method comprising: an activation step in which the surface of a first substrate (11) is irradiated with a beam (2) of ion particles of a gas (1) such as Ar and sputter-etched to thereby attach sputtered particles (Ms) from the first substrate (11) onto the surface of a second substrate (12), the first substrate (11) comprising at least one among a semiconductor material, a compound semiconductor material, and a metal material; and a joining step in which the surface of the second substrate (12), onto which the sputtered particles (Ms) from the first substrate (11) are attached, and the surface of the substrate (11), which is sputter-etched, are overlapped and joined with each other.
(FR)L'invention porte sur un procédé de jonction de substrat pour relier un premier substrat (11) et un second substrat (12) par gravure par pulvérisation cathodique, le procédé de jonction de substrat comprenant : une étape d'activation dans laquelle la surface d'un premier substrat (11) est exposée à un faisceau (2) de particules ioniques d'un gaz (1) tel que de l'argon et gravée par pulvérisation cathodique pour ainsi fixer des particules pulvérisées (Ms) du premier substrat (11) sur la surface d'un second substrat (12), le premier substrat (11) comprenant au moins un matériau parmi un matériau semi-conducteur, un matériau semi-conducteur composé et un matériau métallique ; et une étape de jonction dans laquelle la surface du second substrat (12), sur laquelle sont fixées les particules pulvérisées (Ms) du premier substrat (11), et la surface du substrat (11), qui est gravée par pulvérisation cathodique, se chevauchent et se rejoignent entre elles.
(JA)第一の基材(11)と第二の基材(12)とをスパッタエッチングにより接合する基材接合方法であって、第一の基材(11)が、半導体材料,化合物半導体材料,金属材料,のうちの少なくとも一種からなり、Ar等のガス(1)のイオン粒子のビーム(2)を第一の基材(11)の表面に照射して、第一の基材(11)の表面をスパッタエッチングすることにより、第一の基材(11)のスパッタ粒子(Ms)を第二の基材(12)の表面に被着させる活性化工程と、第一の基材(11)のスパッタ粒子(Ms)を被着された第二の基材(12)の表面と、スパッタエッチングされた第一の基材(11)の表面とを重ね合わせて接合する接合工程とを行う。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)