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|1. (WO2018020742) HEAT TREATMENT METHOD AND HEAT TREATMENT DEVICE|
|Applicants:||SCREEN HOLDINGS CO., LTD.
|Title:||HEAT TREATMENT METHOD AND HEAT TREATMENT DEVICE|
In the present invention, a semiconductor wafer to be treated is heated to a first preliminary heating temperature between 100°C and 200°C with the interior of a chamber storing the semiconductor wafer in a state of reduced pressure that is lower than atmospheric pressure. Next, with the interior of the chamber restored to a pressure higher than when the pressure was reduced, preliminary heating is performed to raise the temperature of the semiconductor wafer to a second preliminary heating temperature between 500°C and 700°C, and then the surface of the semiconductor wafer is irradiated with flash light from a flash lamp. By heating the semiconductor wafer to the relatively low first preliminary heating temperature, very small amounts of moisture and such that had been adsorbed by the surface of the semiconductor wafer can be desorbed from said surface, and flash heat treatment can be performed in a state where oxygen originating from such adsorbed moisture and such has been eliminated as much as possible.