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1. (WO2018020742) HEAT TREATMENT METHOD AND HEAT TREATMENT DEVICE

Pub. No.:    WO/2018/020742    International Application No.:    PCT/JP2017/014016
Publication Date: Fri Feb 02 00:59:59 CET 2018 International Filing Date: Wed Apr 05 01:59:59 CEST 2017
IPC: H01L 21/316
H01L 21/265
H01L 21/31
H01L 21/336
H01L 29/78
Applicants: SCREEN HOLDINGS CO., LTD.
株式会社SCREENホールディングス
Inventors: AOYAMA Takayuki
青山 敬幸
KATO Shinichi
加藤 慎一
FUSE Kazuhiko
布施 和彦
KAWARAZAKI Hikaru
河原▲崎▼ 光
FURUKAWA Masashi
古川 雅志
TANIMURA Hideaki
谷村 英昭
UEDA Akitsugu
上田 晃頌
Title: HEAT TREATMENT METHOD AND HEAT TREATMENT DEVICE
Abstract:
In the present invention, a semiconductor wafer to be treated is heated to a first preliminary heating temperature between 100°C and 200°C with the interior of a chamber storing the semiconductor wafer in a state of reduced pressure that is lower than atmospheric pressure. Next, with the interior of the chamber restored to a pressure higher than when the pressure was reduced, preliminary heating is performed to raise the temperature of the semiconductor wafer to a second preliminary heating temperature between 500°C and 700°C, and then the surface of the semiconductor wafer is irradiated with flash light from a flash lamp. By heating the semiconductor wafer to the relatively low first preliminary heating temperature, very small amounts of moisture and such that had been adsorbed by the surface of the semiconductor wafer can be desorbed from said surface, and flash heat treatment can be performed in a state where oxygen originating from such adsorbed moisture and such has been eliminated as much as possible.