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1. (WO2018020422) MOLECULAR COATINGS OF NITRIDE SEMICONDUCTORS FOR OPTOELECTRONICS, ELECTRONICS, AND SOLAR ENERGY HARVESTING
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2018/020422 International Application No.: PCT/IB2017/054514
Publication Date: 01.02.2018 International Filing Date: 25.07.2017
IPC:
H01L 33/44 (2010.01) ,C01B 3/04 (2006.01) ,C25B 1/00 (2006.01) ,H01L 31/0216 (2014.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
44
characterised by the coatings, e.g. passivation layer or anti-reflective coating
C CHEMISTRY; METALLURGY
01
INORGANIC CHEMISTRY
B
NON-METALLIC ELEMENTS; COMPOUNDS THEREOF
3
Hydrogen; Gaseous mixtures containing hydrogen; Separation of hydrogen from mixtures containing it; Purification of hydrogen
02
Production of hydrogen or of gaseous mixtures containing hydrogen
04
by decomposition of inorganic compounds, e.g. ammonia
C CHEMISTRY; METALLURGY
25
ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
B
ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON- METALS; APPARATUS THEREFOR
1
Electrolytic production of inorganic compounds or non-metals
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
Details
0216
Coatings
Applicants:
KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY [SA/SA]; 4700 King Abdullah University of Science and Technology Thuwal, 23955-6900, SA
Inventors:
NG, Tien Khee; SA
ZHAO, Chao; SA
PRIANTE, Davide; SA
OOI, Boon S.; SA
HUSSEIN, Mohamed Ebaid Abdrabou; SA
Priority Data:
62/366,95026.07.2016US
Title (EN) MOLECULAR COATINGS OF NITRIDE SEMICONDUCTORS FOR OPTOELECTRONICS, ELECTRONICS, AND SOLAR ENERGY HARVESTING
(FR) REVÊTEMENTS MOLÉCULAIRES DE SEMI-CONDUCTEURS DE NITRURE POUR L'OPTOÉLECTRONIQUE, L'ÉLECTRONIQUE ET LA COLLECTE D'ÉNERGIE SOLAIRE
Abstract:
(EN) Gallium nitride based semiconductors are provided having one or more passivated surfaces. The surfaces can have a plurality of thiol compounds attached thereto for enhancement of optoelectronic properties and/or solar water splitting properties. The surfaces can also include wherein the surface has been treated with chemical solution for native oxide removal and / or wherein the surface has attached thereto a plurality of nitrides, oxides, insulating compounds, thiol compounds, or a combination thereof to create a treated surface for enhancement of optoelectronic properties and / or solar water splitting properties. Methods of making the gallium nitride based semiconductors are also provided. Methods can include cleaning a native surface of a gallium nitride semiconductor to produce a cleaned surface, etching the cleaned surface to remove oxide layers on the surface, and applying single or multiple coatings of nitrides, oxides, insulating compounds, thiol compounds, or a combination thereof attached to the surface.
(FR) L'invention concerne également des semi-conducteurs à base de nitrure de Gallium ayant une ou plusieurs surfaces passivées. Les surfaces peuvent avoir une pluralité de composés de thiol attachés à celles-ci pour améliorer les propriétés optoélectroniques et/ou les propriétés de séparation de l'eau solaire. Les surfaces peuvent également comprendre la surface qui a été traitée avec une solution chimique pour l'élimination d'oxyde natif et/ou dans laquelle la surface a fixé à celle-ci une pluralité de nitrures, des oxydes, des composés d'isolation, des composés de thiol ou une combinaison de ceux-ci pour créer une surface traitée pour l'amélioration des propriétés optoélectroniques et/ou des propriétés de séparation de l'eau solaire. L'invention porte également sur des procédés de fabrication des semi-conducteurs à base de nitrure de gallium. Les procédés peuvent comprendre le nettoyage d'une surface native d'un semi-conducteur au nitrure de gallium pour produire une surface nettoyée, la gravure de la surface nettoyée pour éliminer les couches d'oxyde sur la surface, et l'application d'un ou de plusieurs revêtements de nitrures, d'oxydes, de composés isolants, de composés de thiol ou d'une combinaison de ceux-ci attachés à la surface.
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African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)