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|1. (WO2018018762) COMPOSITE DIELECTRIC GRATE-BASED DOUBLE-DEVICE PHOTOSENSITIVE DETECTION UNIT, DETECTOR AND METHOD THEREFOR|
|Title:||COMPOSITE DIELECTRIC GRATE-BASED DOUBLE-DEVICE PHOTOSENSITIVE DETECTION UNIT, DETECTOR AND METHOD THEREFOR|
The invention discloses a composite dielectric gate-based double-device photosensitive detection unit, a detector and a method therefor. The photosensitive detection unit comprises a composite dielectric gate MOS-C portion and a composite dielectric gate MOSFET portion. The two portions are formed above the same P-type semiconductor substrate and share a charge coupling layer. A plurality of the photosensitive detection units are arranged on the same P-type semiconductor substrate in an array to form a detector, and adjacent unit pixels in the detector are isolated through a deep groove isolation region and a P+-type injection region below the isolation region. During detection, the P-type semiconductor substrate of the composite dielectric gate MOS-C portion is photosensitive, and then photoelectrons are coupled to the charge coupling layer, and the photoelectron signals are read through the composite dielectric gate MOSFET portion. According to the invention, detection of optical signals can be well achieved, and a better weak light response and linearity are achieved without any obvious saturation phenomenon, and the invention has a larger dynamic range and relatively higher quantum efficiency.