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1. (WO2018017962) ON-CHIP HIGH CAPACITANCE TERMINATION FOR TRANSMITTERS
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.:    WO/2018/017962    International Application No.:    PCT/US2017/043301
Publication Date: 25.01.2018 International Filing Date: 21.07.2017
IPC:
G02F 1/017 (2006.01), H01S 5/026 (2006.01), G02F 1/015 (2006.01)
Applicants: SKORPIOS TECHNOLOGIES, INC. [US/US]; 7401 Snaproll Street NE Albuquerque, New Mexico 87109 (US)
Inventors: KRASULICK, Stephen B.; (US).
LAMBERT, Damien; (US).
BONTHRON, Andrew; (US).
LI, Guoliang; (US)
Agent: CROOKSTON, Matthew B.; (US).
KILPATRICK TOWNSEND & STOCKTON LLP; Mailstop: IP Docketing - 22 1100 Peachtree St. Suite 2800 Atlanta, Georgia 30309 (US).
LARGENT, Craig; (US)
Priority Data:
62/365,862 22.07.2016 US
15/656,137 21.07.2017 US
Title (EN) ON-CHIP HIGH CAPACITANCE TERMINATION FOR TRANSMITTERS
(FR) TERMINAISON SUR PUCE À CAPACITÉ ÉLEVÉE POUR ÉMETTEURS
Abstract: front page image
(EN)A modulator and a capacitor are integrated on a semiconductor substrate for modulating a laser beam. Integrating the capacitor on the substrate reduces parasitic inductance for high-speed optical communication.
(FR)Un modulateur et un condensateur sont intégrés sur un substrat semiconducteur pour moduler un faisceau laser. L'intégration du condensateur sur le substrat réduit l'inductance parasite pour la communication optique à grande vitesse.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)