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1. (WO2018016456) FIELD-EFFECT TRANSISTOR, METHOD FOR PRODUCING THE SAME, DISPLAY ELEMENT, IMAGE DISPLAY DEVICE, AND SYSTEM

Pub. No.:    WO/2018/016456    International Application No.:    PCT/JP2017/025827
Publication Date: Fri Jan 26 00:59:59 CET 2018 International Filing Date: Sat Jul 15 01:59:59 CEST 2017
IPC: H01L 29/45
H01L 29/66
H01L 29/786
Applicants: RICOH COMPANY, LTD.
KUSAYANAGI, Minehide
UEDA, Naoyuki
NAKAMURA, Yuki
ABE, Yukiko
MATSUMOTO, Shinji
SONE, Yuji
SAOTOME, Ryoichi
ARAE, Sadanori
Inventors: KUSAYANAGI, Minehide
UEDA, Naoyuki
NAKAMURA, Yuki
ABE, Yukiko
MATSUMOTO, Shinji
SONE, Yuji
SAOTOME, Ryoichi
ARAE, Sadanori
Title: FIELD-EFFECT TRANSISTOR, METHOD FOR PRODUCING THE SAME, DISPLAY ELEMENT, IMAGE DISPLAY DEVICE, AND SYSTEM
Abstract:
A field-effect transistor including: a gate electrode, which is configured to apply gate voltage; a source electrode and a drain electrode, which are configured to take electric current out; an active layer, which is disposed between the source electrode and the drain electrode and is formed of an oxide semiconductor; and a gate insulating layer, which is disposed between the gate electrode and the active layer, the source electrode and the drain electrode each including a metal region formed of a metal and an oxide region formed of one or more metal oxides, and a part of the oxide region in each of the source electrode and the drain electrode being in contact with the active layer, and rest of the oxide region being in contact with one or more components other than the active layer.