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1. (WO2018016419) METHOD FOR PRODUCING SEMICONDUCTOR PRODUCTION DEVICE COMPONENT, AND SEMICONDUCTOR PRODUCTION DEVICE COMPONENT

Pub. No.:    WO/2018/016419    International Application No.:    PCT/JP2017/025610
Publication Date: Fri Jan 26 00:59:59 CET 2018 International Filing Date: Fri Jul 14 01:59:59 CEST 2017
IPC: C04B 37/00
H01L 21/683
Applicants: NGK SPARK PLUG CO., LTD.
日本特殊陶業株式会社
Inventors: MITSUYA Kohei
三矢 耕平
TANGE Hideo
丹下 秀夫
HOTTA Motoki
堀田 元樹
OGAWA Takamichi
小川 貴道
Title: METHOD FOR PRODUCING SEMICONDUCTOR PRODUCTION DEVICE COMPONENT, AND SEMICONDUCTOR PRODUCTION DEVICE COMPONENT
Abstract:
The present invention suppresses a decline in the joining strength between a first ceramic member and a second ceramic member while reducing the joining temperature thereof. To this end, a method for producing a semiconductor production device component includes a step for preparing a first ceramic member formed from a material having AlN as a principal component thereof, a step for preparing a second ceramic member formed from a material having AlN as a principal component thereof, and a step for joining the first and second ceramic members to one another by heating and pressurizing with a joining agent containing Eu2O3, Gd2O3 and Al2O3 interposed between the first and second ceramic members.