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1. (WO2018016418) COMPONENT FOR SEMICONDUCTOR PRODUCTION DEVICE
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Pub. No.: WO/2018/016418 International Application No.: PCT/JP2017/025609
Publication Date: 25.01.2018 International Filing Date: 13.07.2017
IPC:
C04B 37/00 (2006.01) ,H01L 21/683 (2006.01)
C CHEMISTRY; METALLURGY
04
CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
B
LIME; MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
37
Joining burned ceramic articles with other burned ceramic articles or other articles by heating
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67
Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
683
for supporting or gripping
Applicants:
日本特殊陶業株式会社 NGK SPARK PLUG CO., LTD. [JP/JP]; 愛知県名古屋市瑞穂区高辻町14番18号 14-18, Takatsuji-cho, Mizuho-ku, Nagoya-shi, Aichi 4678525, JP
Inventors:
三矢 耕平 MITSUYA Kohei; JP
丹下 秀夫 TANGE Hideo; JP
堀田 元樹 HOTTA Motoki; JP
小川 貴道 OGAWA Takamichi; JP
Agent:
特許業務法人アルファ国際特許事務所 ALPHA INTERNATIONAL PATENT FIRM; 愛知県名古屋市中区錦一丁目11番20号 大永ビルディング3F Daiei Bldg. 3F, 1-11-20, Nishiki, Naka-ku, Nagoya-shi, Aichi 4600003, JP
Priority Data:
2016-14249420.07.2016JP
Title (EN) COMPONENT FOR SEMICONDUCTOR PRODUCTION DEVICE
(FR) COMPOSANT DESTINÉ À UN DISPOSITIF DE PRODUCTION DE SEMI-CONDUCTEURS
(JA) 半導体製造装置用部品
Abstract:
(EN) In order to suppress the scattering of a rare earth hydroxide and also suppress a decline in the joining strength between a first ceramic member and a second ceramic member, this component for a semiconductor production device is equipped with a first ceramic member formed from a material having AlN as the principal component thereof, a second ceramic member formed from a material having AlN as the principal component thereof, and a joining layer which joins the first ceramic member and the second ceramic member and is positioned between the first ceramic member and the second ceramic member, wherein the joining layer contains a perovskite oxide represented by chemical formula ABO3 (herein, A is a rare earth element and B is Al), and does not contain a rare earth single oxide having only oxygen and a rare earth element.
(FR) La présente invention concerne un composant pour dispositif de production de semi-conducteurs qui permet d'empêcher la diffusion d'un hydroxyde de terre rare et d'empêcher également une diminution de la force d'assemblage entre un premier élément céramique et un second élément céramique. Pour ce faire, ce composant pour dispositif de production de semi-conducteurs comporte un premier élément en céramique formé à partir d'un matériau ayant du AlN en tant que composant principal de ce dernier, un second élément en céramique formé à partir d'un matériau ayant du AlN en tant que composant principal de ce dernier, et une couche d'assemblage qui assemble le premier élément céramique et le second élément céramique et qui est positionnée entre le premier élément céramique et le second élément céramique, la couche d'assemblage renfermant un oxyde pérovskite représenté par la formule chimique ABO3 (dans laquelle A est une terre rare et B est Al), et ne renfermant pas de mono-oxyde de terre rare ayant uniquement de l'oxygène et une terre rare.
(JA) 希土類水酸化物の飛散や第1のセラミックス部材と第2のセラミックス部材との接合強度の低下を抑制する。 半導体製造装置用部品は、AlNを主成分とする材料により形成された第1のセラミックス部材と、AlNを主成分とする材料により形成された第2のセラミックス部材と、前記第1のセラミックス部材と前記第2のセラミックス部材との間に配置され、前記第1のセラミックス部材と前記第2のセラミックス部材とを接合する接合層と、を備え、前記接合層は、化学式ABO(但し、Aは希土類元素であり、BはAlである。)で表されるペロブスカイト型酸化物を含み、希土類元素と酸素とのみを有する希土類単一酸化物を含まない。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)