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1. (WO2018016418) COMPONENT FOR SEMICONDUCTOR PRODUCTION DEVICE

Pub. No.:    WO/2018/016418    International Application No.:    PCT/JP2017/025609
Publication Date: Fri Jan 26 00:59:59 CET 2018 International Filing Date: Fri Jul 14 01:59:59 CEST 2017
IPC: C04B 37/00
H01L 21/683
Applicants: NGK SPARK PLUG CO., LTD.
日本特殊陶業株式会社
Inventors: MITSUYA Kohei
三矢 耕平
TANGE Hideo
丹下 秀夫
HOTTA Motoki
堀田 元樹
OGAWA Takamichi
小川 貴道
Title: COMPONENT FOR SEMICONDUCTOR PRODUCTION DEVICE
Abstract:
In order to suppress the scattering of a rare earth hydroxide and also suppress a decline in the joining strength between a first ceramic member and a second ceramic member, this component for a semiconductor production device is equipped with a first ceramic member formed from a material having AlN as the principal component thereof, a second ceramic member formed from a material having AlN as the principal component thereof, and a joining layer which joins the first ceramic member and the second ceramic member and is positioned between the first ceramic member and the second ceramic member, wherein the joining layer contains a perovskite oxide represented by chemical formula ABO3 (herein, A is a rare earth element and B is Al), and does not contain a rare earth single oxide having only oxygen and a rare earth element.