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1. (WO2018016417) SEMICONDUCTOR SUBSTRATE

Pub. No.:    WO/2018/016417    International Application No.:    PCT/JP2017/025600
Publication Date: Fri Jan 26 00:59:59 CET 2018 International Filing Date: Fri Jul 14 01:59:59 CEST 2017
IPC: H01L 21/02
Applicants: SICOXS CORPORATION
株式会社サイコックス
Inventors: IMAOKA Ko
今岡 功
MURASAKI Takanori
村崎 孝則
SHIMO Toshihisa
下 俊久
UCHIDA Hidetsugu
内田 英次
MINAMI Akiyuki
南 章行
Title: SEMICONDUCTOR SUBSTRATE
Abstract:
Provided is a laminated semiconductor substrate with which interfacial resistance can be reduced. The semiconductor substrate is provided with a single crystalline SiC substrate and a polycrystalline SiC substrate. The single crystalline SiC substrate and the polycrystalline SiC substrate are bonded to each other. A bonding area between the single crystalline SiC substrate and the polycrystalline SiC substrate includes specific atoms of 1×1021 (atoms/cm3).