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1. (WO2018016350) SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING SAME

Pub. No.:    WO/2018/016350    International Application No.:    PCT/JP2017/024952
Publication Date: Fri Jan 26 00:59:59 CET 2018 International Filing Date: Sat Jul 08 01:59:59 CEST 2017
IPC: H01L 21/02
H01L 27/12
Applicants: MITSUBISHI ELECTRIC CORPORATION
三菱電機株式会社
Inventors: MATSUDA, Takashi
松田 喬
YAGYU, Eiji
柳生 栄治
Title: SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING SAME
Abstract:
This semiconductor substrate 1 comprises, as a bonding layer, a silicon oxide layer 4 between a nitride semiconductor layer 2 and a diamond layer 3. This semiconductor substrate 1 is produced by a method that comprises: a step wherein silicon oxide layers 4 are formed on respective surfaces of the nitride semiconductor layer 2 and the diamond layer 3 and subsequently, the surfaces of the silicon oxide layers 4 are subjected to planarization processing; and a step wherein the nitride semiconductor layer 2 and the diamond layer 3 are laminated in such a manner that the planarized silicon oxide layers 4 face each other and subsequently, the resulting laminate is subjected to a heat treatment. It is preferable that the surfaces of the planarized silicon oxide layers 4 are subjected to plasma processing before laminating the nitride semiconductor layer 2 and the diamond layer 3.