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1. (WO2018016282) SEMICONDUCTOR DEVICE

Pub. No.:    WO/2018/016282    International Application No.:    PCT/JP2017/023901
Publication Date: Fri Jan 26 00:59:59 CET 2018 International Filing Date: Fri Jun 30 01:59:59 CEST 2017
IPC: H01L 29/739
H01L 29/78
Applicants: DENSO CORPORATION
株式会社デンソー
Inventors: KONO Kenji
河野 憲司
Title: SEMICONDUCTOR DEVICE
Abstract:
A semiconductor device that comprises: a plurality of IGBT elements; and freewheeling diodes that respectively correspond to the IGBT elements. The IGBT elements are connected in parallel and driven. Each of the IGBT elements has: a collector region (11); a drift region (10); a body region (13); trench gates (G1, G2, G3, G4) that pass through the body region and arrive at the drift region; and an emitter region that (14) that is surrounded by the body region and contacts the trench gates via an insulating film. Each of the IGBT elements also has: active cells at which the emitter region is formed; dummy cells at which the emitter region is not formed; and active dummy cells at which the emitter region is not formed. The active dummy cells include float cells at which the body region is electrically floating. The number of float cells is 5%-35% of the total number of active cells and active dummy cells.