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1. (WO2018015809) MULTIPLE SILICON ATOM QUANTUM DOT AND DEVICES INCLUSIVE THEREOF
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Pub. No.: WO/2018/015809 International Application No.: PCT/IB2017/001051
Publication Date: 25.01.2018 International Filing Date: 19.07.2017
IPC:
B82B 1/00 (2006.01) ,B82B 3/00 (2006.01) ,B82Y 20/00 (2011.01) ,H01L 33/06 (2010.01)
B PERFORMING OPERATIONS; TRANSPORTING
82
NANO-TECHNOLOGY
B
NANO-STRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
1
Nano-structures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
B PERFORMING OPERATIONS; TRANSPORTING
82
NANO-TECHNOLOGY
B
NANO-STRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
3
Manufacture or treatment of nano-structures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
B PERFORMING OPERATIONS; TRANSPORTING
82
NANO-TECHNOLOGY
Y
SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE  OR TREATMENT OF NANO-STRUCTURES
20
Nano-optics, e.g. quantum optics or photonic crystals
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
04
with a quantum effect structure or superlattice, e.g. tunnel junction
06
within the light emitting region, e.g. quantum confinement structure or tunnel barrier
Applicants:
QUANTUM SILICON INC. [CA/CA]; 11421 Saskatchewan Drive Edmonton, AB T6G 2M9, CA
Inventors:
WOLKOW, Robert, A.; CA
ACHAI, Roshan; CA
HUFF, Taleana; CA
LABIDI, Hatem; CA
LIVADARU, Lucian; CA
PIVA, Paul; CA
RASHIDI, Mohammad; CA
Priority Data:
62/364,20619.07.2016US
62/379,16424.08.2016US
Title (EN) MULTIPLE SILICON ATOM QUANTUM DOT AND DEVICES INCLUSIVE THEREOF
(FR) POINT QUANTIQUE À ATOME DE SILICIUM MULTIPLE ET DISPOSITIFS Y COMPRIS
Abstract:
(EN) A multiple- atom silicon quantum dot is provided that includes multiple dangling bonds on an otherwise H-terminated silicon surface, each dangling bonds having one of three ionization states of +1, 0 or -1 and corresponding respectively to 0, 1, or 2 electrons in a dangling bond state. The dangling bonds together in close proximity and having the dangling bond states energetically in the silicon band gap with selective control of the ionization state of one of the dangling bonds. A new class of electronics elements is provided through the inclusion of at least one input and at least one output to the multiple dangling bonds. Selective modification or creation of a dangling bond is also detailed.
(FR) L'invention concerne un point quantique de silicium à atomes multiples qui comprend de multiples liaisons pendantes sur une surface de silicium à terminaison H, chaque liaison pendante ayant un des trois états d'ionisation de +1, 0 ou -1 et correspondant respectivement à 0, 1 ou 2 électrons dans un état de liaison pendante. Les liaisons pendantes se trouvent à proximité étroite et possèdent les états de liaison pendante énergétiquement dans la bande interdite du silicium avec une régulation sélective de l'état d'ionisation de l'une des liaisons pendantes. Une nouvelle classe d'éléments électroniques est fournie par l'inclusion d'au moins une entrée et d'au moins une sortie aux multiples liaisons pendantes. La modification sélective ou la création d'une liaison pendante est également détaillée.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)