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1. (WO2018015809) MULTIPLE SILICON ATOM QUANTUM DOT AND DEVICES INCLUSIVE THEREOF

Pub. No.:    WO/2018/015809    International Application No.:    PCT/IB2017/001051
Publication Date: Fri Jan 26 00:59:59 CET 2018 International Filing Date: Thu Jul 20 01:59:59 CEST 2017
IPC: B82B 1/00
B82B 3/00
B82Y 20/00
H01L 33/06
Applicants: QUANTUM SILICON INC.
Inventors: WOLKOW, Robert, A.
ACHAI, Roshan
HUFF, Taleana
LABIDI, Hatem
LIVADARU, Lucian
PIVA, Paul
RASHIDI, Mohammad
Title: MULTIPLE SILICON ATOM QUANTUM DOT AND DEVICES INCLUSIVE THEREOF
Abstract:
A multiple- atom silicon quantum dot is provided that includes multiple dangling bonds on an otherwise H-terminated silicon surface, each dangling bonds having one of three ionization states of +1, 0 or -1 and corresponding respectively to 0, 1, or 2 electrons in a dangling bond state. The dangling bonds together in close proximity and having the dangling bond states energetically in the silicon band gap with selective control of the ionization state of one of the dangling bonds. A new class of electronics elements is provided through the inclusion of at least one input and at least one output to the multiple dangling bonds. Selective modification or creation of a dangling bond is also detailed.