The invention relates to an optoelectronic semiconductor chip (1), which, in one embodiment, has a semiconductor layer sequence (2, 4, 5) made of AlInGaN. The semiconductor layer sequence includes an n-conductive n region (2), a p-conductive p region (5) and an active zone (4) located in between and having at least one quantum trough for generating radiation. The p region (5) comprises an electron barrier layer (56), a contact layer (58) and a decomposition stop layer (50). The contact layer directly adjoins a contact metallisation (8), in particular an anode, of the semiconductor chip (1). In the decomposition stop layer (50), an aluminum content (C) of at least 5% and at most 30% is present at some points. The aluminum content (C) is varied in the decomposition stop layer (50).