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1. (WO2018015391) OPTOELECTRONIC SEMICONDUCTOR CHIP

Pub. No.:    WO/2018/015391    International Application No.:    PCT/EP2017/068136
Publication Date: Fri Jan 26 00:59:59 CET 2018 International Filing Date: Wed Jul 19 01:59:59 CEST 2017
IPC: H01L 33/32
H01L 33/04
H01L 33/02
Applicants: OSRAM OPTO SEMICONDUCTORS GMBH
Inventors: BERGBAUER, Werner
HERTKORN, Joachim
Title: OPTOELECTRONIC SEMICONDUCTOR CHIP
Abstract:
The invention relates to an optoelectronic semiconductor chip (1), which, in one embodiment, has a semiconductor layer sequence (2, 4, 5) made of AlInGaN. The semiconductor layer sequence includes an n-conductive n region (2), a p-conductive p region (5) and an active zone (4) located in between and having at least one quantum trough for generating radiation. The p region (5) comprises an electron barrier layer (56), a contact layer (58) and a decomposition stop layer (50). The contact layer directly adjoins a contact metallisation (8), in particular an anode, of the semiconductor chip (1). In the decomposition stop layer (50), an aluminum content (C) of at least 5% and at most 30% is present at some points. The aluminum content (C) is varied in the decomposition stop layer (50).