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1. WO2018013717 - LOW RESISTANCE VERTICAL CAVITY LIGHT SOURCE WITH PNPN BLOCKING

Publication Number WO/2018/013717
Publication Date 18.01.2018
International Application No. PCT/US2017/041761
International Filing Date 12.07.2017
IPC
H01S 5/183 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator
18Surface-emitting lasers
183having a vertical cavity
CPC
H01S 2301/166
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
2301Functional characteristics
16Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
166Single transverse or lateral mode
H01S 5/183
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator ; , e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
18Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
183having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
H01S 5/18308
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator ; , e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
18Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
183having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
18308having a special structure for lateral current or light confinement
H01S 5/18322
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator ; , e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
18Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
183having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
18308having a special structure for lateral current or light confinement
18322Position of the structure
H01S 5/18327
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator ; , e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
18Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
183having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
18308having a special structure for lateral current or light confinement
18322Position of the structure
18327Structure being part of a DBR
H01S 5/18358
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator ; , e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
18Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
183having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
18358containing spacer layers to adjust the phase of the light wave in the cavity
Applicants
  • UNIVERSITY OF CENTRAL FLORIDA RESEARCH FOUNDATION, INC. [US]/[US]
  • SDPHOTONICS, LLC [US]/[US]
  • DEPPE, Dennis, G. [US]/[US]
Inventors
  • DEPPE, Dennis, G.
Agents
  • JETTER, Neil, R.
Priority Data
62/361,53113.07.2016US
62/467,51406.03.2017US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) LOW RESISTANCE VERTICAL CAVITY LIGHT SOURCE WITH PNPN BLOCKING
(FR) SOURCE LUMINEUSE À CAVITÉ VERTICALE À FAIBLE RÉSISTANCE AVEC BLOCAGE PNPN
Abstract
(EN)
A semiconductor vertical light source includes an upper mirror and a lower mirror. An active region is between the upper and lower mirror. The light source includes an inner mode confinement region and outer current blocking region. The outer current blocking region includes a common epitaxial layer that includes an epitaxially regrown interface which is between the active region and upper mirror, and a conducting channel including acceptors is in the inner mode confinement region. The current blocking region includes a first impurity doped region with donors between the epitaxially regrown interface and active region, and a second impurity doped region with acceptors is between the first doped region and lower mirror. The outer current blocking region provides a PNPN current blocking region that includes the upper mirror or a p-type layer, first doped region, second doped region, and lower mirror or an n-type layer.
(FR)
Une source lumineuse verticale à semi-conducteur comprend un miroir supérieur et un miroir inférieur. Une région active est située entre le miroir supérieur et le miroir inférieur. La source lumineuse comprend une région de confinement de mode interne et une région de blocage de courant externe. La région de blocage de courant externe comprend une couche épitaxiale commune qui comprend une interface formée par recroissance épitaxiale qui se trouve entre la région active et le miroir supérieur, et un canal conducteur comprenant des accepteurs se trouve dans la région de confinement de mode interne. La région de blocage de courant comprend une première région dopée à l'impureté avec des donneurs entre l'interface formée par recroissance épitaxiale et la région active, et une seconde région dopée à l'impureté avec des accepteurs se situe entre la première région dopée et le miroir inférieur. La région de blocage de courant externe fournit une région de blocage de courant PNPN qui comprend le miroir supérieur ou une couche de type p, une première région dopée, une seconde région dopée, et un miroir inférieur ou une couche de type n.
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