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1. (WO2018013713) SEMICONDUCTOR DEVICES WITH DEPLETED HETEROJUNCTION CURRENT BLOCKING REGIONS

Pub. No.:    WO/2018/013713    International Application No.:    PCT/US2017/041756
Publication Date: Fri Jan 19 00:59:59 CET 2018 International Filing Date: Thu Jul 13 01:59:59 CEST 2017
IPC: H01L 29/737
H01L 29/66
H01L 29/06
Applicants: UNIVERSITY OF CENTERAL FLORIDA RESEARCH FOUNDATION, INC.
SDPHOTONICS, LLC
Inventors: DEPPE, Dennis, G.
Title: SEMICONDUCTOR DEVICES WITH DEPLETED HETEROJUNCTION CURRENT BLOCKING REGIONS
Abstract:
A semiconductor device includes an upper and lower mirror. At least one active region for light generation is between the upper and lower mirror. At least one cavity spacer layer is between at least one of the upper and lower mirror and the active region. The device includes an inner mode confinement region and an outer current blocking region. A depleted heterojunction current blocking region (DHCBR) including a depleting impurity is within the outer current blocking region of ≥1 of the upper mirror, lower mirror, and the first active region. A middle layer including a conducting channel is within the inner mode confinement region that is framed by the DHCBR. The DHCBR forces current flow into the conducting channel during normal operation of the light source.