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1. (WO2018012807) ULTRAVIOLET LIGHT-EMITTING DIODE
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.:    WO/2018/012807    International Application No.:    PCT/KR2017/007286
Publication Date: 18.01.2018 International Filing Date: 07.07.2017
IPC:
H01L 33/00 (2010.01), H01L 33/62 (2010.01), H01L 33/38 (2010.01)
Applicants: SEOUL VIOSYS CO., LTD. [KR/KR]; 65-16, Sandan-ro 163beon-gil, Danwon-gu Ansan-si Gyeonggi-do 15429 (KR)
Inventors: PARK, Ju Yong; (KR).
JANG, Seong Gyu; (KR).
LEE, Kyu Ho; (KR).
LEE, Joon Hee; (KR)
Agent: AIP PATENT & LAW FIRM; 30-1, Teheran-ro 14-gil, Gangnam-gu Seoul 06239 (KR)
Priority Data:
10-2016-0090201 15.07.2016 KR
Title (EN) ULTRAVIOLET LIGHT-EMITTING DIODE
(FR) DIODE ÉLECTROLUMINESCENTE ULTRAVIOLETTE
(KO) 자외선 발광 다이오드
Abstract: front page image
(EN)An ultraviolet light-emitting diode is provided. According to one embodiment, the ultraviolet light-emitting diode comprises: a substrate; an n-type semiconductor layer located on the substrate; a mesa arranged on the n-type semiconductor layer and including an active layer and a p-type semiconductor layer; an n-ohmic contact layer coming in contact with the n-type semiconductor layer; a p-ohmic contact layer coming in contact with the p-type semiconductor layer; an n-bump electrically connected to the n-ohmic contact layer; and a p-bump electrically connected to the p-ohmic contact layer, wherein the mesa comprises a main branch and a plurality of sub branches extending from the main branch, the n-ohmic contact layer encompasses the mesa and is interposed in an area between the sub branches, and the n-bump and the p-bump respectively cover the upper part and sides of the mesa. Therefore, an optical output can be increased by reducing light loss, and a forward voltage can be lowered.
(FR)L'invention concerne une diode électroluminescente ultraviolette. Selon un mode de réalisation, la diode électroluminescente ultraviolette comprend : un substrat ; une couche semi-conductrice de type n située sur le substrat ; une mesa disposée sur la couche semi-conductrice de type n et comprenant une couche active et une couche semi-conductrice de type p ; une couche de contact ohmique n venant en contact avec la couche semi-conductrice de type n ; une couche de contact ohmique p venant en contact avec la couche semi-conductrice de type p ; une bosse n connectée électriquement à la couche de contact ohmique n ; et une bosse p connectée électriquement à la couche de contact ohmique p, la mesa comprenant une branche principale et une pluralité de sous-branches s'étendant à partir de la branche principale, la couche de contact ohmique n englobant la mesa et étant interposée dans une zone située entre les sous-branches, et les bosses n et p recouvrant respectivement la partie supérieure et les côtés de la mesa. Par conséquent, une sortie optique peut être augmentée au moyen d'une réduction de la perte de lumière, et une tension directe peut être abaissée.
(KO)자외선 발광 다이오드가 제공된다. 일 실시예에 따른 자외선 발광 다이오드는, 기판; 기판 상에 위치하는 n형 반도체층; 형 반도체층 상에 배치되고, 활성층 및 p형 반도체층을 포함하는 메사; n형 반도체층에 콘택하는 n 오믹 콘택층; p형 반도체층에 콘택하는 p 오믹 콘택층; n 오믹 콘택층에 전기적으로 접속된 n 범프; 및 p 오믹 콘택층에 전기적으로 접속된 p 범프를 포함하고, 메사는 메인 브랜치와 인 브랜치로부터 연장하는 복수의 서브 브랜치들을 포함하고, n 오믹 콘택층은 메사를 둘러싸고 또한 서브 브랜치들 사이의 영역에 개재되며, n 범프 및 p 범프는 각각 메사의 상부 및 측면을 덮는다. 이에 따라, 광 손실을 줄여 광 출력을 높일 수 있으며, 순방향 전압을 낮출 수 있다.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: Korean (KO)
Filing Language: Korean (KO)