WIPO logo
Mobile | Deutsch | Español | Français | 日本語 | 한국어 | Português | Русский | 中文 | العربية |
PATENTSCOPE

Search International and National Patent Collections
World Intellectual Property Organization
Options
Query Language
Stem
Sort by:
List Length
Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2018012568) METHOD FOR MANUFACTURING ORGANIC SEMICONDUCTOR THIN FILM, ORGANIC SEMICONDUCTOR THIN FILM, AND ORGANIC LIGHT-EMITTING ELEMENT
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2018/012568 International Application No.: PCT/JP2017/025482
Publication Date: 18.01.2018 International Filing Date: 13.07.2017
IPC:
H05B 33/10 (2006.01) ,H01L 51/50 (2006.01)
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
B
ELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
33
Electroluminescent light sources
10
Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50
specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
Applicants: KYUSHU UNIVERSITY, NATIONAL UNIVERSITY CORPORATION[JP/JP]; 6-10-1, Hakozaki, Higashi-ku, Fukuoka-shi, Fukuoka 8128581, JP
Inventors: ESAKI Yu; JP
MATSUSHIMA Toshinori; JP
KOMINO Takeshi; JP
ADACHI Chihaya; JP
Agent: SIKS & CO.; 8th Floor, Kyobashi-Nisshoku Bldg., 8-7, Kyobashi 1-chome, Chuo-ku, Tokyo 1040031, JP
Priority Data:
2016-13828013.07.2016JP
Title (EN) METHOD FOR MANUFACTURING ORGANIC SEMICONDUCTOR THIN FILM, ORGANIC SEMICONDUCTOR THIN FILM, AND ORGANIC LIGHT-EMITTING ELEMENT
(FR) PROCÉDÉ DE FABRICATION DE PELLICULE MINCE SEMI-CONDUCTRICE ORGANIQUE, PELLICULE MINCE SEMI-CONDUCTRICE ORGANIQUE, ET ÉLÉMENT ÉLECTROLUMINESCENT ORGANIQUE
(JA) 有機半導体薄膜の製造方法、有機半導体薄膜および有機発光素子
Abstract:
(EN) This method for manufacturing an organic semiconductor thin film includes a step for performing vacuum vapor deposition of an organic semiconductor material on a substrate controlled to a temperature of less than 15°C. The temperature of the substrate on which the organic semiconductor material undergoes vacuum vapor deposition is preferably controlled to satisfy T < 0.8 Tg, and more preferably controlled to satisfy 0.7 Tg < T. T represents the temperature of the substrate, and Tg represents the glass transition temperature in a vacuum of the organic semiconductor material to undergo vapor deposition. The unit for T and Tg is Kelvin (K). Using the organic semiconductor thin film manufactured according to the present invention makes it possible to realize an organic light-emitting element having a low drive voltage.
(FR) La présente invention concerne un procédé de fabrication d'une pellicule mince semi-conductrice organique qui consiste en une étape de mise en œuvre de dépôt en phase vapeur sous vide d'un matériau semi-conducteur organique sur un substrat contrôlé à une température inférieure à 15 °C. La température du substrat sur lequel le matériau semi-conducteur organique subit le dépôt en phase vapeur sous vide est de préférence contrôlée pour satisfaire T < 0,8 Tg, et mieux encore contrôlé pour satisfaire 0,7 Tg < T. T représente la température du substrat, et Tg représente la température de transition vitreuse sous vide du matériau semi-conducteur organique devant subir le dépôt en phase vapeur. L'unité pour T et Tg est le kelvin (K). Grâce à la pellicule mince semi-conductrice organique fabriquée selon la présente invention, il est possible de réaliser un élément électroluminescent organique dont la tension d'attaque est faible.
(JA) 15℃未満の温度に制御した基板上に有機半導体材料を真空蒸着させる工程を含む、有機半導体薄膜の製造方法。有機半導体材料を真空蒸着させる基板の温度は、T<0.8Tgを満たすように制御することが好ましく、さらに0.7Tg<Tを満たすように制御することがより好ましい。Tは基板温度を表し、Tgは蒸着する有機半導体材料の真空下におけるガラス転移温度を表す。TとTgの単位はケルビン(K)である。この発明により製造された有機半導体薄膜を用いることにより、駆動電圧が低い有機発光素子を実現しうる。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)