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1. (WO2018012547) METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE WITH P-TYPE DIFFUSION LAYER, SEMICONDUCTOR SUBSTRATE WITH P-TYPE DIFFUSION LAYER, METHOD FOR PRODUCING SOLAR CELL ELEMENT, AND SOLAR CELL ELEMENT
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Pub. No.: WO/2018/012547 International Application No.: PCT/JP2017/025439
Publication Date: 18.01.2018 International Filing Date: 12.07.2017
IPC:
H01L 21/225 (2006.01) ,H01L 31/068 (2012.01) ,H01L 31/18 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
22
Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regions; Redistribution of impurity materials, e.g. without introduction or removal of further dopant
225
using diffusion into, or out of, a solid from or into a solid phase, e.g. a doped oxide layer
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04
adapted as conversion devices
06
characterised by at least one potential-jump barrier or surface barrier
068
the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18
Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Applicants:
日立化成株式会社 HITACHI CHEMICAL COMPANY, LTD. [JP/JP]; 東京都千代田区丸の内一丁目9番2号 9-2, Marunouchi 1-chome, Chiyoda-ku, Tokyo 1006606, JP
Inventors:
佐藤 鉄也 SATO, Tetsuya; JP
野尻 剛 NOJIRI, Takeshi; JP
田中 直敬 TANAKA, Naotaka; JP
岩室 光則 IWAMURO, Mitsunori; JP
清水 成宜 SHIMIZU, Shigenori; JP
森下 真年 MORISHITA, Masatoshi; JP
Agent:
特許業務法人太陽国際特許事務所 TAIYO, NAKAJIMA & KATO; 東京都新宿区新宿4丁目3番17号 3-17, Shinjuku 4-chome, Shinjuku-ku, Tokyo 1600022, JP
Priority Data:
2016-13976714.07.2016JP
Title (EN) METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE WITH P-TYPE DIFFUSION LAYER, SEMICONDUCTOR SUBSTRATE WITH P-TYPE DIFFUSION LAYER, METHOD FOR PRODUCING SOLAR CELL ELEMENT, AND SOLAR CELL ELEMENT
(FR) PROCÉDÉ DE FABRICATION D'UN SUBSTRAT SEMI-CONDUCTEUR AVEC UNE COUCHE DE DIFFUSION DE TYPE P, SUBSTRAT SEMI-CONDUCTEUR AVEC COUCHE DE DIFFUSION DE TYPE P, PROCÉDÉ DE PRODUCTION D'UN ÉLÉMENT DE CELLULE SOLAIRE ET ÉLÉMENT DE CELLULE SOLAIRE
(JA) p型拡散層付き半導体基板の製造方法、p型拡散層付き半導体基板、太陽電池素子の製造方法、及び太陽電池素子
Abstract:
(EN) This method for producing a semiconductor substrate with a p-type diffusion layer comprises: a step wherein a p-type diffusion layer-forming composition, which contains a compound containing boron, is applied onto a semiconductor substrate, thereby forming a p-type diffusion layer-forming composition layer in which the mass of the compound containing boron per unit area is from 0.001 mg/cm2 to 0.1 mg/cm2; and a step wherein a p-type diffusion layer is formed on the semiconductor substrate by heating the semiconductor substrate, on which the p-type diffusion layer-forming composition layer has been formed.
(FR) Ce procédé de production d'un substrat semi-conducteur avec une couche de diffusion de type p comprend: une étape dans laquelle une composition formant une couche de diffusion de type p, qui contient un composé contenant du bore, est appliquée sur un substrat semi-conducteur, formant ainsi une couche de composition formant une couche de diffusion de type p dans laquelle la masse du composé contenant du bore par unité de surface est de 0,001 mg/cm 2 à 0,1 mg/cm 2; et une étape dans laquelle une couche de diffusion de type p est formée sur le substrat semi-conducteur par chauffage du substrat semi-conducteur, sur lequel la couche de composition formant une couche de diffusion de type p a été formée.
(JA) p型拡散層付き半導体基板の製造方法は、半導体基板上に、ホウ素を含む化合物を含有するp型拡散層形成組成物を付与して、単位面積当たりの前記ホウ素を含む化合物の質量が0.001mg/cm~0.1mg/cmであるp型拡散層形成組成物層を形成する工程と、前記p型拡散層形成組成物層が付与された前記半導体基板を熱処理して、前記半導体基板にp型拡散層を形成する工程と、を含む。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)