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1. (WO2018012546) MANUFACTURING METHOD FOR SEMICONDUCTOR LAMINATED FILM, AND SEMICONDUCTOR LAMINATED FILM
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Pub. No.:    WO/2018/012546    International Application No.:    PCT/JP2017/025436
Publication Date: 18.01.2018 International Filing Date: 12.07.2017
Chapter 2 Demand Filed:    22.12.2017    
IPC:
H01L 21/203 (2006.01), C23C 14/06 (2006.01), C23C 14/34 (2006.01), H01L 21/329 (2006.01), H01L 21/331 (2006.01), H01L 21/336 (2006.01), H01L 21/338 (2006.01), H01L 29/161 (2006.01), H01L 29/737 (2006.01), H01L 29/778 (2006.01), H01L 29/78 (2006.01), H01L 29/812 (2006.01), H01L 29/88 (2006.01)
Applicants: NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY [JP/JP]; 3-8-1, Harumi-cho, Fuchu-shi, Tokyo 1838538 (JP).
NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY [JP/JP]; 4-2-1, Nukui-Kitamachi, Koganei-shi, Tokyo 1848795 (JP)
Inventors: SUDA, Yoshiyuki; (JP).
TSUKAMOTO, Takahiro; (JP).
MOTOHASHI, Akira; (JP).
DEGURA, Kyohei; (JP).
OKUBO, Katsumi; (JP).
YAGI, Takuma; (JP).
KASAMATSU, Akifumi; (JP).
HIROSE, Nobumitsu; (JP).
MATSUI, Toshiaki; (JP)
Agent: OFUCHI, Michie; (JP).
FUSE, Yukio; (JP)
Priority Data:
2016-140117 15.07.2016 JP
Title (EN) MANUFACTURING METHOD FOR SEMICONDUCTOR LAMINATED FILM, AND SEMICONDUCTOR LAMINATED FILM
(FR) PROCÉDÉ DE FABRICATION DE FILM STRATIFIÉ SEMI-CONDUCTEUR ET FILM STRATIFIÉ SEMI-CONDUCTEUR
(JA) 半導体積層膜の製造方法、および半導体積層膜
Abstract: front page image
(EN)Provided is a manufacturing method for a semiconductor laminated film, which comprises a step for forming a semiconductor layer containing silicon and germanium on a silicon substrate via sputtering, wherein, during sputtering, the film deposition temperature of the semiconductor layer is less than 500°C and the film deposition pressure of the semiconductor layer is 1mTorr to 11mTorr inclusive, or the film deposition temperature of the semiconductor layer is less than 600°C and the film deposition pressure of the semiconductor layer is greater than or equal to 2mTorr and less than 5mTorr; the volume ratio of hydrogen gas in the sputtering gas is less than 0.1%; and the relationship t ≤0.881×x-4.79, where t (nm) is the thickness of the semiconductor layer and x is the ratio of germanium atoms to the sum of silicon atoms and germanium atoms in the semiconductor layer, is satisfied.
(FR)L'invention concerne un procédé de fabrication d'un film stratifié semi-conducteur, qui comprend une étape de formation d'une couche semi-conductrice contenant du silicium et du germanium sur un substrat de silicium par pulvérisation cathodique, la température de dépôt de film de la couche semi-conductrice étant, pendant la pulvérisation cathodique, inférieure à 500 °C et la pression de dépôt de film de la couche semi-conductrice étant de 1 mTorr à 11 mTorr inclus, ou la température de dépôt de film de la couche semi-conductrice étant inférieure à 600 °C et la pression de dépôt de film de la couche semi-conductrice étant supérieure ou égale à 2 mTorr et inférieure à 5 mTorr; le rapport volumique de l'hydrogène gazeux dans le gaz de pulvérisation cathodique est inférieur à 0,1 %; et la relation t ≤ 0,881×x-4,79, où t (nm) est l'épaisseur de la couche semi-conductrice et x est le rapport des atomes de germanium à la somme des atomes de silicium et des atomes de germanium dans la couche semi-conductrice, est satisfaite.
(JA)本発明に係る半導体積層膜の製造方法は、シリコン基板上に、スパッタ法によって、シリコンおよびゲルマニウムを含む半導体層を形成する工程を含み、スパッタ法において、半導体層の成膜温度は、500℃未満であり、かつ、半導体層の成膜圧力は、1mTorr以上11mTorr以下であり、または、半導体層の成膜温度は、600℃未満であり、かつ、半導体層の成膜圧力は、2mTorr以上5mTorr未満であり、スパッタガスにおける水素ガスの体積比は、0.1%未満であり、半導体層の厚さをt(nm)とし、半導体層におけるシリコンの原子数とゲルマニウムの原子数との和に対するゲルマニウムの原子数の比をxとすると、t≦0.881×x-4.79の関係を満たす。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)