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1. (WO2018011675) GRAPHENE COMPOUND, METHOD FOR FORMING GRAPHENE COMPOUND, AND POWER STORAGE DEVICE
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2018/011675 International Application No.: PCT/IB2017/054062
Publication Date: 18.01.2018 International Filing Date: 06.07.2017
IPC:
C07F 7/18 (2006.01) ,C01B 32/198 (2017.01) ,H01M 10/0562 (2010.01)
C CHEMISTRY; METALLURGY
07
ORGANIC CHEMISTRY
F
ACYCLIC, CARBOCYCLIC, OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
7
Compounds containing elements of the 4th Group of the Periodic System
02
Silicon compounds
08
Compounds having one or more C-Si linkages
18
Compounds having one or more C-Si linkages as well as one or more C-O-Si linkages
[IPC code unknown for C01B 32/198]
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
M
PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
10
Secondary cells; Manufacture thereof
05
Accumulators with non-aqueous electrolyte
056
characterized by the materials used as electrolytes, e.g. mixed inorganic/organic electrolytes
0561
the electrolyte being constituted of inorganic materials only
0562
Solid materials
Applicants: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.[JP/JP]; 398, Hase Atsugi-shi, Kanagawa 2430036, JP
Inventors: KADOMA, Hiroshi; JP
OGUNI, Teppei; JP
SEO, Satoshi; JP
Priority Data:
2016-13810613.07.2016JP
Title (EN) GRAPHENE COMPOUND, METHOD FOR FORMING GRAPHENE COMPOUND, AND POWER STORAGE DEVICE
(FR) COMPOSÉ DE GRAPHÈNE, PROCÉDÉ DE FORMATION DE COMPOSÉ DE GRAPHÈNE ET DISPOSITIF DE STOCKAGE D'ÉNERGIE
Abstract:
(EN) A material that can be used in a wide temperature range and a manufacturing method thereof are provided. A graphene compound has a substituted or unsubstituted chain group. The chain group has one or more ester groups or carboxyl groups and contains a Si atom. The chain group is bonded to a graphene layer through the Si atom. A method for forming a graphene compound includes a step of stirring graphene oxide and a Lewis base and a step of mixing a silicon compound having one or more ester groups or carboxyl groups into the mixed solution and stirring the obtained mixed solution. The Lewis base is butylamine, pentylamine, hexylamine, diethylamine, dipropylamine, dibutylamine, triethylamine, tripropylamine, or pyridine.
(FR) L'invention concerne un matériau qui peut être utilisé dans une large plage de température et un procédé de fabrication correspondant. Un composé de graphène présente un groupe linéaire substitué ou non substitué. Le groupe linéaire présente un ou plusieurs groupes ester ou carboxyle et contient un atome de Si. Le groupe linéaire est lié à une couche de graphène via l'atome de Si. Un procédé de formation d'un composé de graphène comprend une étape d'agitation d'oxyde de graphène et d'une base de Lewis et une étape de mélange d'un composé de silicium présentant un ou plusieurs groupes ester ou carboxyle dans la solution mélangée et d'agitation de la solution mélangée obtenue. La base de Lewis est la butylamine, la pentylamine, l'hexylamine, la diéthylamine, la dipropylamine, la dibutylamine, la triéthylamine, la tripropylamine ou la pyridine.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)