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1. (WO2018011647) METAL OXIDE AND SEMICONDUCTOR DEVICE

Pub. No.:    WO/2018/011647    International Application No.:    PCT/IB2017/053613
Publication Date: Fri Jan 19 00:59:59 CET 2018 International Filing Date: Tue Jun 20 01:59:59 CEST 2017
IPC: H01L 29/786
C23C 14/08
H01L 21/363
Applicants: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventors: YAMAZAKI, Shunpei
NAKASHIMA, Motoki
BABA, Haruyuki
Title: METAL OXIDE AND SEMICONDUCTOR DEVICE
Abstract:
A novel metal oxide is provided. The metal oxide has a plurality of energy gaps, and includes a first region having a high energy level of a conduction band minimum and a second region having an energy level of a conduction band minimum lower than that of the first region. The second region comprises more carriers than the first region. A difference between the energy level of the conduction band minimum of the first region and the energy level of the conduction band minimum of the second region is 0.2 eV or more. The energy gap of the first region is greater than or equal to 3.3 eV and less than or equal to 4.0 eV and the energy gap of the second region is greater than or equal to 2.2 eV and less than or equal to 2.9 eV.