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1. (WO2018010214) METHOD FOR MANUFACTURING METAL OXIDE THIN FILM TRANSISTOR ARRAY SUBSTRATE

Pub. No.:    WO/2018/010214    International Application No.:    PCT/CN2016/091824
Publication Date: Fri Jan 19 00:59:59 CET 2018 International Filing Date: Thu Jul 28 01:59:59 CEST 2016
IPC: H01L 21/26
H01L 21/268
H01L 21/28
H01L 21/34
H01L 21/84
Applicants: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
深圳市华星光电技术有限公司
Inventors: XIANG, Zhouyi
向舟翊
Title: METHOD FOR MANUFACTURING METAL OXIDE THIN FILM TRANSISTOR ARRAY SUBSTRATE
Abstract:
The present invention provides a method for manufacturing a metal oxide thin film transistor array substrate. The thin film transistor adopts a top-gate coplanar structure, which can effectively reduce stray capacitance; an active layer, an insulating layer, and an exposed area of the active layer after a gate metal layer is patterned are processed by illumination twice, to overcome the defect of a low-temperature deposited film, increase carrier concentration in a channel region, and enhance the electrical conductivity of a contact region between a source and a drain; therefore, the contact resistance between the source and the active layer and between the drain and the active layer is lowered, the mobility and the current on/off ratio are improved, and the electrical property of the thin film transistor is further improved.