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Machine translation
1. (WO2018009299) ON-DIE SYSTEM ELECTROSTATIC DISCHARGE PROTECTION
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.:    WO/2018/009299    International Application No.:    PCT/US2017/036390
Publication Date: 11.01.2018 International Filing Date: 07.06.2017
IPC:
G11C 7/10 (2006.01), G11C 7/24 (2006.01)
Applicants: INTEL CORPORATION [US/US]; 2200 Mission College Boulevard Santa Clara, California 95054 (US)
Inventors: MOZAK, Christopher P.; (US).
ZIA, Victor; (US).
THOMPSON, Gabriel J.; (US)
Agent: PERDOK, Monique M.; (US).
WOO, Justin N., Reg. No. 62,686; (US).
GOULD, James R., Reg. No. 72,086; (US).
BLACK, David W., Reg. No. 42,331; (US).
BIANCHI, Timothy E., Reg. No. 39,610; (US).
SCHEER, Bradley W., Reg. No. 47,059; (US).
BEEKMAN, Marvin L., Reg. No. 38,377; (US).
MCCRACKIN, Ann M., Reg. No. 42,858; (US).
ARORA, Suneel, Reg. No. 42,267; (US)
Priority Data:
15/203,296 06.07.2016 US
Title (EN) ON-DIE SYSTEM ELECTROSTATIC DISCHARGE PROTECTION
(FR) PROTECTION CONTRE LES DÉCHARGES ÉLECTROSTATIQUES D'UN SYSTÈME SUR PUCE
Abstract: front page image
(EN)Some embodiments include apparatus and methods using a first transistor coupled between a node and a supply node, a second transistor coupled between the node and a ground node, an electrostatic discharge (ESD) protection unit including a diode coupled between the node and an additional node, and a transistor coupled between the additional node and the supply node.
(FR)Selon certains modes de réalisation, l'invention concerne un appareil et des procédés utilisant un premier transistor couplé entre un nœud et un nœud d'alimentation, un second transistor couplé entre le nœud et un nœud de masse, une unité de protection contre les décharges électrostatiques (DES) comprenant une diode couplée entre le nœud et un nœud supplémentaire, et un transistor couplé entre le nœud supplémentaire et le nœud d'alimentation.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)