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1. (WO2018009175) HIGH SPEED SINGLE TRANSISTOR NON-VOLATILE MEMORY CELL
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.:    WO/2018/009175    International Application No.:    PCT/US2016/041059
Publication Date: 11.01.2018 International Filing Date: 06.07.2016
IPC:
H01L 27/115 (2006.01), H01L 29/78 (2006.01), H01L 29/66 (2006.01), G11C 16/04 (2006.01)
Applicants: INTEL CORPORATION [US/US]; 2200 Mission College Boulevard Santa Clara, California 95054 (US)
Inventors: MAJHI, Prashant; (US).
KARPOV, Elijah; (US)
Agent: BRASK, Justin, K.; (US)
Priority Data:
Title (EN) HIGH SPEED SINGLE TRANSISTOR NON-VOLATILE MEMORY CELL
(FR) CELLULE DE MÉMOIRE NON VOLATILE À TRANSISTOR UNIQUE À GRANDE VITESSE
Abstract: front page image
(EN)A high speed single transistor suitable for a non-volatile memory cell is described. In one example, the memory cell has a source, a drain coupled to the source through a gate channel, a gate coupled to the gate channel, a floating gate between the gate and the gate channel, and a threshold switch between the floating gate and the gate channel.
(FR)L'invention porte sur un transistor unique à grande vitesse approprié pour une cellule de mémoire non volatile. Dans un exemple, la cellule de mémoire comporte une source, un drain couplé à la source par l'intermédiaire d'un canal de grille, une grille couplée au canal de grille, une grille flottante entre la grille et le canal de grille, et un commutateur de seuil entre la grille flottante et le canal de grille.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)