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1. (WO2018009175) HIGH SPEED SINGLE TRANSISTOR NON-VOLATILE MEMORY CELL

Pub. No.:    WO/2018/009175    International Application No.:    PCT/US2016/041059
Publication Date: Fri Jan 12 00:59:59 CET 2018 International Filing Date: Thu Jul 07 01:59:59 CEST 2016
IPC: H01L 27/115
H01L 29/78
H01L 29/66
G11C 16/04
Applicants: INTEL CORPORATION
Inventors: MAJHI, Prashant
KARPOV, Elijah
Title: HIGH SPEED SINGLE TRANSISTOR NON-VOLATILE MEMORY CELL
Abstract:
A high speed single transistor suitable for a non-volatile memory cell is described. In one example, the memory cell has a source, a drain coupled to the source through a gate channel, a gate coupled to the gate channel, a floating gate between the gate and the gate channel, and a threshold switch between the floating gate and the gate channel.